Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

M. H. Lee; Y. T. Wei; J. C. Lin; C. W. Chen; W. H. Tu; M. Tang

doi:10.1063/1.4898150

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

M. H. Lee^*, Y. T. Wei, J. C. Lin, C. W. Chen, W. H. Tu, M. Tang

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Using a ferroelectric PbZrTiO₃ gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (g_d) shows only 16% enhancement with large V _DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

Original language	English
Article number	107117
Journal	AIP Advances
Volume	4
Issue number	10
DOIs	https://doi.org/10.1063/1.4898150
Publication status	Published - 2014 Oct 1

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.4898150

Cite this

@article{6050afa40e17417ebec40679591e80f4,

title = "Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on",

abstract = "Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.",

author = "Lee, {M. H.} and Wei, {Y. T.} and Lin, {J. C.} and Chen, {C. W.} and Tu, {W. H.} and M. Tang",

note = "Publisher Copyright: {\textcopyright} 2014 Author(s).",

year = "2014",

month = oct,

day = "1",

doi = "10.1063/1.4898150",

language = "English",

volume = "4",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

AU - Lee, M. H.

AU - Wei, Y. T.

AU - Lin, J. C.

AU - Chen, C. W.

AU - Tu, W. H.

AU - Tang, M.

PY - 2014/10/1

Y1 - 2014/10/1

N2 - Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

AB - Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

UR - http://www.scopus.com/inward/record.url?scp=84907983448&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907983448&partnerID=8YFLogxK

U2 - 10.1063/1.4898150

DO - 10.1063/1.4898150

M3 - Article

AN - SCOPUS:84907983448

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 10

M1 - 107117

ER -

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this