Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

M. H. Lee, Y. T. Wei, J. C. Lin, C. W. Chen, W. H. Tu, M. Tang

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Abstract

Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope). The drain conductance (gd) shows only 16% enhancement with large V DS (∼- 1.5V) indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (-0.1 V). The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

Original languageEnglish
Article number107117
JournalAIP Advances
Volume4
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, M. H., Wei, Y. T., Lin, J. C., Chen, C. W., Tu, W. H., & Tang, M. (2014). Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on. AIP Advances, 4(10), [107117]. https://doi.org/10.1063/1.4898150