Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface

Vu Thanh Tra; Jhih Wei Chen; Po Cheng Huang; Bo Chao Huang; Ye Cao; Chao Hui Yeh; Heng Jui Liu; Eugene A. Eliseev; Anna N. Morozovska; Jiunn Yuan Lin; Yi Chun Chen; Ming Wen Chu; Po Wen Chiu; Ya Ping Chiu; Long Qing Chen; Chung Lin Wu; Ying Hao Chu

doi:10.1002/adma.201300757

Ferroelectric control of the conduction at the LaAlO₃/SrTiO ₃ heterointerface

Vu Thanh Tra
, Jhih Wei Chen
, Po Cheng Huang
, Bo Chao Huang
, Ye Cao
, Chao Hui Yeh
, Heng Jui Liu
, Eugene A. Eliseev
, Anna N. Morozovska
, Jiunn Yuan Lin^*
, Yi Chun Chen
, Ming Wen Chu
, Po Wen Chiu
, Ya Ping Chiu
, Long Qing Chen
, Chung Lin Wu
, Ying Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

94 Citations (Scopus)

Abstract

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P_up) leads to charge depletion and consequently low conduction. Switching the polarization direction (P_down) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

Original language	English
Pages (from-to)	3357-3364
Number of pages	8
Journal	Advanced Materials
Volume	25
Issue number	24
DOIs	https://doi.org/10.1002/adma.201300757
Publication status	Published - 2013 Jun 25
Externally published	Yes

Keywords

2D electron gases (2DEG)
complex oxides
ferroelectric polarization
heterointerfaces
metal-insulator transitions

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201300757

Cite this

Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., Liu, H. J., Eliseev, E. A., Morozovska, A. N., Lin, J. Y., Chen, Y. C., Chu, M. W., Chiu, P. W., Chiu, Y. P., Chen, L. Q., Wu, C. L., & Chu, Y. H. (2013). Ferroelectric control of the conduction at the LaAlO₃/SrTiO ₃ heterointerface. Advanced Materials, 25(24), 3357-3364. https://doi.org/10.1002/adma.201300757

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abstract = "Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.",

keywords = "2D electron gases (2DEG), complex oxides, ferroelectric polarization, heterointerfaces, metal-insulator transitions",

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AU - Tra, Vu Thanh

AU - Chen, Jhih Wei

AU - Huang, Po Cheng

AU - Huang, Bo Chao

AU - Cao, Ye

AU - Yeh, Chao Hui

AU - Liu, Heng Jui

AU - Eliseev, Eugene A.

AU - Morozovska, Anna N.

AU - Lin, Jiunn Yuan

AU - Chen, Yi Chun

AU - Chu, Ming Wen

AU - Chiu, Po Wen

AU - Chiu, Ya Ping

AU - Chen, Long Qing

AU - Wu, Chung Lin

AU - Chu, Ying Hao

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KW - 2D electron gases (2DEG)

KW - complex oxides

KW - ferroelectric polarization

KW - heterointerfaces

KW - metal-insulator transitions

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