Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn Yuan Lin, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long Qing Chen, Chung Lin Wu, Ying Hao Chu

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (Pup) leads to charge depletion and consequently low conduction. Switching the polarization direction (Pdown) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

Original languageEnglish
Pages (from-to)3357-3364
Number of pages8
JournalAdvanced Materials
Volume25
Issue number24
DOIs
Publication statusPublished - 2013 Jun 25

Keywords

  • 2D electron gases (2DEG)
  • complex oxides
  • ferroelectric polarization
  • heterointerfaces
  • metal-insulator transitions

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., Liu, H. J., Eliseev, E. A., Morozovska, A. N., Lin, J. Y., Chen, Y. C., Chu, M. W., Chiu, P. W., Chiu, Y. P., Chen, L. Q., Wu, C. L., & Chu, Y. H. (2013). Ferroelectric control of the conduction at the LaAlO3/SrTiO 3 heterointerface. Advanced Materials, 25(24), 3357-3364. https://doi.org/10.1002/adma.201300757