Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

You Ting Lee; Hsuan Han Chen; Yi Chun Tung; Bing Yang Shih; Szu Yen Hsiung; Tsung Ming Lee; Chih Chieh Hsu; Chien Liu; Hsiao Hsuan Hsu; Chun Yen Chang; Yu Pin Lan; Chun Hu Cheng

doi:10.1109/EDSSC.2019.8753958

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

You Ting Lee, Hsuan Han Chen, Yi Chun Tung, Bing Yang Shih, Szu Yen Hsiung, Tsung Ming Lee, Chih Chieh Hsu, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang, Yu Pin Lan, Chun Hu Cheng

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

Original language	English
Title of host publication	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728102863
DOIs	https://doi.org/10.1109/EDSSC.2019.8753958
Publication status	Published - 2019 Jun
Event	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China Duration: 2019 Jun 12 → 2019 Jun 14

Publication series

Name	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference	2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
Country/Territory	China
City	Xi'an
Period	2019/06/12 → 2019/06/14

Keywords

Ferroelectric polarization
HfZrO
Nonvolatile memory
Remote plasma

ASJC Scopus subject areas

Signal Processing
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/EDSSC.2019.8753958

Cite this

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., Hsu, C. C., Liu, C., Hsu, H. H., Chang, C. Y., Lan, Y. P., & Cheng, C. H. (2019). Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 Article 8753958 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8753958

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. / Lee, You Ting; Chen, Hsuan Han; Tung, Yi Chun et al.
2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8753958 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, YT, Chen, HH, Tung, YC, Shih, BY, Hsiung, SY, Lee, TM, Hsu, CC, Liu, C, Hsu, HH, Chang, CY, Lan, YP & Cheng, CH 2019, Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8753958, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 2019/06/12. https://doi.org/10.1109/EDSSC.2019.8753958

Lee YT, Chen HH, Tung YC, Shih BY, Hsiung SY, Lee TM et al. Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). doi: 10.1109/EDSSC.2019.8753958

Lee, You Ting ; Chen, Hsuan Han ; Tung, Yi Chun et al. / Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

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title = "Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments",

abstract = "In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.",

keywords = "Ferroelectric polarization, HfZrO, Nonvolatile memory, Remote plasma",

author = "Lee, {You Ting} and Chen, {Hsuan Han} and Tung, {Yi Chun} and Shih, {Bing Yang} and Hsiung, {Szu Yen} and Lee, {Tsung Ming} and Hsu, {Chih Chieh} and Chien Liu and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Lan, {Yu Pin} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 ; Conference date: 12-06-2019 Through 14-06-2019",

year = "2019",

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doi = "10.1109/EDSSC.2019.8753958",

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AU - Hsiung, Szu Yen

AU - Lee, Tsung Ming

AU - Hsu, Chih Chieh

AU - Liu, Chien

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AU - Lan, Yu Pin

AU - Cheng, Chun Hu

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AB - In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

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Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

Abstract

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Keywords

ASJC Scopus subject areas

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