Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments

You Ting Lee, Hsuan Han Chen, Yi Chun Tung, Bing Yang Shih, Szu Yen Hsiung, Tsung Ming Lee, Chih Chieh Hsu, Chien Liu, Hsiao Hsuan Hsu, Chun Yen Chang, Yu Pin Lan, Chun-Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.

Original languageEnglish
Title of host publication2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728102863
DOIs
Publication statusPublished - 2019 Jun 1
Event2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China
Duration: 2019 Jun 122019 Jun 14

Publication series

Name2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
CountryChina
CityXi'an
Period19/6/1219/6/14

Fingerprint

Hafnium oxides
hafnium oxides
Nitrogen plasma
nitrogen plasma
Ferroelectric materials
Ferroelectric devices
Data storage equipment
Ferroelectricity
endurance
ferroelectricity
Leakage currents
Durability
leakage
Fatigue of materials
cycles

Keywords

  • Ferroelectric polarization
  • HfZrO
  • Nonvolatile memory
  • Remote plasma

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Lee, Y. T., Chen, H. H., Tung, Y. C., Shih, B. Y., Hsiung, S. Y., Lee, T. M., ... Cheng, C-H. (2019). Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 [8753958] (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2019.8753958

Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. / Lee, You Ting; Chen, Hsuan Han; Tung, Yi Chun; Shih, Bing Yang; Hsiung, Szu Yen; Lee, Tsung Ming; Hsu, Chih Chieh; Liu, Chien; Hsu, Hsiao Hsuan; Chang, Chun Yen; Lan, Yu Pin; Cheng, Chun-Hu.

2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8753958 (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, YT, Chen, HH, Tung, YC, Shih, BY, Hsiung, SY, Lee, TM, Hsu, CC, Liu, C, Hsu, HH, Chang, CY, Lan, YP & Cheng, C-H 2019, Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019., 8753958, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019, Xi'an, China, 19/6/12. https://doi.org/10.1109/EDSSC.2019.8753958
Lee YT, Chen HH, Tung YC, Shih BY, Hsiung SY, Lee TM et al. Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8753958. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019). https://doi.org/10.1109/EDSSC.2019.8753958
Lee, You Ting ; Chen, Hsuan Han ; Tung, Yi Chun ; Shih, Bing Yang ; Hsiung, Szu Yen ; Lee, Tsung Ming ; Hsu, Chih Chieh ; Liu, Chien ; Hsu, Hsiao Hsuan ; Chang, Chun Yen ; Lan, Yu Pin ; Cheng, Chun-Hu. / Ferroelectric characterization of hafnium-oxide-based ferroelectric memories with remote nitrogen plasma treatments. 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).
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abstract = "In this paper, we experimentally demonstrated the advantage of remote nitrogen plasma on improving interface quality of HfO2-based ferroelectric devices. The remote nitrogen plasma not only reduces leakage current of gate stack to appropriately sustain the ferroelectricity during ferroelectric domain switching, but also effectively improve the ferroelectric fatigue to enhance endurance cycling performance.",
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