Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

M. H. Lee; C. Y. Kuo; C. H. Tang; H. H. Chen; C. Y. Liao; R. C. Hong; S. S. Gu; Y. C. Chou; Z. Y. Wang; S. Y. Chen; P. G. Chen; M. H. Liao; K. S. Li

doi:10.1109/EDTM.2018.8421475

Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications

M. H. Lee
, C. Y. Kuo
, C. H. Tang
, H. H. Chen
, C. Y. Liao
, R. C. Hong
, S. S. Gu
, Y. C. Chou
, Z. Y. Wang
, S. Y. Chen
, P. G. Chen
, M. H. Liao
, K. S. Li

Institute and Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The typical characteristics of ultra-thin Zr doped in HfO₂ as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with V_P/E=± 4.8V, and >10⁹ cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	271-273
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421475
Publication status	Published - 2018 Jul 26
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: 2018 Mar 13 → 2018 Mar 16

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	2018/03/13 → 2018/03/16

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM.2018.8421475

Cite this

Lee, M. H., Kuo, C. Y., Tang, C. H., Chen, H. H., Liao, C. Y., Hong, R. C., Gu, S. S., Chou, Y. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Liao, M. H., & Li, K. S. (2018). Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 271-273). Article 8421475 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421475

Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. / Lee, M. H.; Kuo, C. Y.; Tang, C. H. et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 271-273 8421475 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Kuo, CY, Tang, CH, Chen, HH, Liao, CY, Hong, RC, Gu, SS, Chou, YC, Wang, ZY, Chen, SY, Chen, PG, Liao, MH & Li, KS 2018, Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421475, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 271-273, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 2018/03/13. https://doi.org/10.1109/EDTM.2018.8421475

Lee MH, Kuo CY, Tang CH, Chen HH, Liao CY, Hong RC et al. Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 271-273. 8421475. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421475

Lee, M. H. ; Kuo, C. Y. ; Tang, C. H. et al. / Ferroelectric Characteristics of Ultra-thin Hf_1-xZr_xO₂ Gate Stack and 1T Memory Operation Applications. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 271-273 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{b3d93a60e0af47688044a6fccbf41eeb,

title = "Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications",

abstract = "The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.",

author = "Lee, \{M. H.\} and Kuo, \{C. Y.\} and Tang, \{C. H.\} and Chen, \{H. H.\} and Liao, \{C. Y.\} and Hong, \{R. C.\} and Gu, \{S. S.\} and Chou, \{Y. C.\} and Wang, \{Z. Y.\} and Chen, \{S. Y.\} and Chen, \{P. G.\} and Liao, \{M. H.\} and Li, \{K. S.\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421475",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "271--273",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

}

TY - GEN

T1 - Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

AU - Lee, M. H.

AU - Kuo, C. Y.

AU - Tang, C. H.

AU - Chen, H. H.

AU - Liao, C. Y.

AU - Hong, R. C.

AU - Gu, S. S.

AU - Chou, Y. C.

AU - Wang, Z. Y.

AU - Chen, S. Y.

AU - Chen, P. G.

AU - Liao, M. H.

AU - Li, K. S.

PY - 2018/7/26

Y1 - 2018/7/26

N2 - The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

AB - The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

UR - https://www.scopus.com/pages/publications/85051532526

UR - https://www.scopus.com/pages/publications/85051532526#tab=citedBy

U2 - 10.1109/EDTM.2018.8421475

DO - 10.1109/EDTM.2018.8421475

M3 - Conference contribution

AN - SCOPUS:85051532526

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 271

EP - 273

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -