Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

M. H. Lee, C. Y. Kuo, C. H. Tang, H. H. Chen, C. Y. Liao, R. C. Hong, S. S. Gu, Y. C. Chou, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. H. Liao, K. S. Li

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

    Original languageEnglish
    Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages271-273
    Number of pages3
    ISBN (Print)9781538637111
    DOIs
    Publication statusPublished - 2018 Jul 26
    Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
    Duration: 2018 Mar 132018 Mar 16

    Publication series

    Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

    Other

    Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
    CountryJapan
    CityKobe
    Period2018/03/132018/03/16

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Industrial and Manufacturing Engineering
    • Electronic, Optical and Magnetic Materials

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