Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications

M. H. Lee, C. Y. Kuo, C. H. Tang, H. H. Chen, C. Y. Liao, R. C. Hong, S. S. Gu, Y. C. Chou, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. H. Liao, K. S. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The typical characteristics of ultra-thin Zr doped in HfO2 as gate stack is demonstrated. The 1T memory window of P/E retention is 0.67V for 5nm and 1.52V for 7nm after extrapolated 10 years with VP/E=± 4.8V, and >109 cycles of read endurance. It is promising to use ultra-thin FE-HZO as the guidelines for 1T memory applications.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages271-273
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - 2018 Jul 26
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 2018 Mar 132018 Mar 16

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period18/3/1318/3/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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    Lee, M. H., Kuo, C. Y., Tang, C. H., Chen, H. H., Liao, C. Y., Hong, R. C., Gu, S. S., Chou, Y. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Liao, M. H., & Li, K. S. (2018). Ferroelectric Characteristics of Ultra-thin Hf1-xZrxO2 Gate Stack and 1T Memory Operation Applications. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 271-273). [8421475] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421475