Ferroelectric Al:HfO2 negative capacitance FETs

M. H. Lee, P. G. Chen, S. T. Fan, Y. C. Chou, C. Y. Kuo, C. H. Tang, H. H. Chen, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, K. T. Chen, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)


The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538635599
Publication statusPublished - 2018 Jan 23
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2017 Dec 22017 Dec 6

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


Other63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/TerritoryUnited States
CitySan Francisco

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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