Ferroelectric Al:HfO2 negative capacitance FETs

M. H. Lee; P. G. Chen; S. T. Fan; Y. C. Chou; C. Y. Kuo; C. H. Tang; H. H. Chen; S. S. Gu; R. C. Hong; Z. Y. Wang; S. Y. Chen; C. Y. Liao; K. T. Chen; S. T. Chang; M. H. Liao; K. S. Li; C. W. Liu

doi:10.1109/IEDM.2017.8268445

Ferroelectric Al:HfO₂ negative capacitance FETs

M. H. Lee, P. G. Chen, S. T. Fan, Y. C. Chou, C. Y. Kuo, C. H. Tang, H. H. Chen, S. S. Gu, R. C. Hong, Z. Y. Wang, S. Y. Chen, C. Y. Liao, K. T. Chen, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

25 Citations (Scopus)

Abstract

The first experimental demonstration of ferroelectric Al:HfO₂ (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (P_r), coercive field (E_c), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrO_x (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfO_x material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

Original language	English
Title of host publication	2017 IEEE International Electron Devices Meeting, IEDM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23.3.1-23.3.4
ISBN (Electronic)	9781538635599
DOIs	https://doi.org/10.1109/IEDM.2017.8268445
Publication status	Published - 2018 Jan 23
Event	63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States Duration: 2017 Dec 2 → 2017 Dec 6

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	63rd IEEE International Electron Devices Meeting, IEDM 2017
Country/Territory	United States
City	San Francisco
Period	2017/12/02 → 2017/12/06

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2017.8268445

Cite this

Lee, M. H., Chen, P. G., Fan, S. T., Chou, Y. C., Kuo, C. Y., Tang, C. H., Chen, H. H., Gu, S. S., Hong, R. C., Wang, Z. Y., Chen, S. Y., Liao, C. Y., Chen, K. T., Chang, S. T., Liao, M. H., Li, K. S., & Liu, C. W. (2018). Ferroelectric Al:HfO₂ negative capacitance FETs. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 23.3.1-23.3.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268445

Ferroelectric Al:HfO₂ negative capacitance FETs. / Lee, M. H.; Chen, P. G.; Fan, S. T. et al.
2017 IEEE International Electron Devices Meeting, IEDM 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 23.3.1-23.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Chen, PG, Fan, ST, Chou, YC, Kuo, CY, Tang, CH, Chen, HH, Gu, SS, Hong, RC, Wang, ZY, Chen, SY, Liao, CY, Chen, KT, Chang, ST, Liao, MH, Li, KS & Liu, CW 2018, Ferroelectric Al:HfO₂ negative capacitance FETs. in 2017 IEEE International Electron Devices Meeting, IEDM 2017. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 23.3.1-23.3.4, 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, United States, 2017/12/02. https://doi.org/10.1109/IEDM.2017.8268445

@inproceedings{5b69be3e67db4593a637873b254170f6,

title = "Ferroelectric Al:HfO2 negative capacitance FETs",

abstract = "The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.",

author = "Lee, {M. H.} and Chen, {P. G.} and Fan, {S. T.} and Chou, {Y. C.} and Kuo, {C. Y.} and Tang, {C. H.} and Chen, {H. H.} and Gu, {S. S.} and Hong, {R. C.} and Wang, {Z. Y.} and Chen, {S. Y.} and Liao, {C. Y.} and Chen, {K. T.} and Chang, {S. T.} and Liao, {M. H.} and Li, {K. S.} and Liu, {C. W.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 63rd IEEE International Electron Devices Meeting, IEDM 2017 ; Conference date: 02-12-2017 Through 06-12-2017",

year = "2018",

month = jan,

day = "23",

doi = "10.1109/IEDM.2017.8268445",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "23.3.1--23.3.4",

booktitle = "2017 IEEE International Electron Devices Meeting, IEDM 2017",

}

TY - GEN

T1 - Ferroelectric Al:HfO2 negative capacitance FETs

AU - Lee, M. H.

AU - Chen, P. G.

AU - Fan, S. T.

AU - Chou, Y. C.

AU - Kuo, C. Y.

AU - Tang, C. H.

AU - Chen, H. H.

AU - Gu, S. S.

AU - Hong, R. C.

AU - Wang, Z. Y.

AU - Chen, S. Y.

AU - Liao, C. Y.

AU - Chen, K. T.

AU - Chang, S. T.

AU - Liao, M. H.

AU - Li, K. S.

AU - Liu, C. W.

PY - 2018/1/23

Y1 - 2018/1/23

N2 - The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

AB - The first experimental demonstration of ferroelectric Al:HfO2 (FE-HAO) FETs is proceeded with negative capacitance (NC) effect. The subthreshold swing (SS) of 40 mV/dec and 39 mV/dec for forward and reverse sweep, respectively, as well as almost hysteresis-free are achieved. The partial orthorhombic phase of FE-HAO is confirmed both with (PMA) and without (PDA) a capping layer. A gradual transition of polarization after 1000°C annealing is obtained with increasing Al concentration for large remanent polarization (Pr), coercive field (Ec), and high dielectric constant. The similar physical thickness (∼7nm) of ferroelectric-HfZrOx (FE-HZO) FET is discussed for comparison. The NC modeling is performed to validate the NC effect for the Al:HfOx material system. The transient behavior is performed at room temperature and low temperature, and the dynamic NC model is discussed.

UR - http://www.scopus.com/inward/record.url?scp=85045216708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045216708&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2017.8268445

DO - 10.1109/IEDM.2017.8268445

M3 - Conference contribution

AN - SCOPUS:85045216708

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 23.3.1-23.3.4

BT - 2017 IEEE International Electron Devices Meeting, IEDM 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 63rd IEEE International Electron Devices Meeting, IEDM 2017

Y2 - 2 December 2017 through 6 December 2017

ER -