FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K. Y. Hsiang; J. Y. Lee; F. S. Chang; Z. F. Lou; Z. X. Li; Z. H. Li; J. H. Chen; C. W. Liu; T. H. Hou; M. H. Lee

doi:10.23919/VLSITechnologyandCir57934.2023.10185274

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

K. Y. Hsiang^*, J. Y. Lee, F. S. Chang, Z. F. Lou, Z. X. Li, Z. H. Li, J. H. Chen, C. W. Liu, T. H. Hou, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

Original language	English
Title of host publication	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185274
Publication status	Published - 2023
Event	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan Duration: 2023 Jun 11 → 2023 Jun 16

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2023-June
ISSN (Print)	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/Territory	Japan
City	Kyoto
Period	2023/06/11 → 2023/06/16

Keywords

Endurance
Ferroelectric
Recovery

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.23919/VLSITechnologyandCir57934.2023.10185274

Cite this

Hsiang, K. Y., Lee, J. Y., Chang, F. S., Lou, Z. F., Li, Z. X., Li, Z. H., Chen, J. H., Liu, C. W., Hou, T. H., & Lee, M. H. (2023). FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185274

FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. / Hsiang, K. Y.; Lee, J. Y.; Chang, F. S. et al.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsiang, KY, Lee, JY, Chang, FS, Lou, ZF, Li, ZX, Li, ZH, Chen, JH, Liu, CW, Hou, TH & Lee, MH 2023, FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. in 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, Japan, 2023/06/11. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185274

Hsiang KY, Lee JY, Chang FS, Lou ZF, Li ZX, Li ZH et al. FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185274

Hsiang, K. Y. ; Lee, J. Y. ; Chang, F. S. et al. / FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations",

abstract = "Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.",

keywords = "Endurance, Ferroelectric, Recovery",

author = "Hsiang, {K. Y.} and Lee, {J. Y.} and Chang, {F. S.} and Lou, {Z. F.} and Li, {Z. X.} and Li, {Z. H.} and Chen, {J. H.} and Liu, {C. W.} and Hou, {T. H.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185274",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Hsiang, K. Y.

AU - Lee, J. Y.

AU - Chang, F. S.

AU - Lou, Z. F.

AU - Li, Z. X.

AU - Li, Z. H.

AU - Chen, J. H.

AU - Liu, C. W.

AU - Hou, T. H.

AU - Lee, M. H.

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N2 - Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

AB - Asymmetric Field Cycling Recovery (AFCR) with a low E-field is proposed for the first time to extend the endurance cycles of a ferroelectric (FE) capacitor and is experimentally demonstrated for 200 periods and accumulated to 1012 switching cycles. Positive and negative Asymmetric minor loops (AmL) with AFCR achieve the nondegradation and complete restoration of Δ 2 Pr toward the prospect of unlimited operation. Furthermore, an FeRAM array circuit with an inverting amplifier is designed to execute the Write/Read and Recovery procedures simultaneously by AFCR scheme.

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KW - Recovery

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FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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