Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

Po Chun Chen; Yu Chien Chiu; Zhi Wei Zheng; Ming Huei Lin; Chun Hu Cheng; Guan Lin Liou; Hsiao Hsuan Hsu; Hsuan Ling Kao

doi:10.1109/TNANO.2017.2719946

Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

Po Chun Chen^*, Yu Chien Chiu, Zhi Wei Zheng, Ming Huei Lin, Chun Hu Cheng, Guan Lin Liou, Hsiao Hsuan Hsu, Hsuan Ling Kao

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high I_on/I_off of 5.7, ×,10⁵ and a high μ FE_of 10.7 cm²,V^-1s^-1. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6,×,10³, a low threshold voltage of-0.13 V, and a very high field-effect mobility of 28 cm²V^-1s^-1. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

Original language	English
Article number	7959132
Pages (from-to)	876-879
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	16
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2017.2719946
Publication status	Published - 2017 Sept

Keywords

Flexible substrate
plasma
thin-film transistor (TFT)
tin oxide (SnO)

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2017.2719946

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title = "Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors",

abstract = "In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high Ion/Ioff of 5.7, ×,105 and a high μ FEof 10.7 cm2,V-1s-1. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6,×,103, a low threshold voltage of-0.13 V, and a very high field-effect mobility of 28 cm2V-1s-1. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.",

keywords = "Flexible substrate, plasma, thin-film transistor (TFT), tin oxide (SnO)",

author = "Chen, {Po Chun} and Chiu, {Yu Chien} and Zheng, {Zhi Wei} and Lin, {Ming Huei} and Cheng, {Chun Hu} and Liou, {Guan Lin} and Hsu, {Hsiao Hsuan} and Kao, {Hsuan Ling}",

note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2017",

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doi = "10.1109/TNANO.2017.2719946",

language = "English",

volume = "16",

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T1 - Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

AU - Chen, Po Chun

AU - Chiu, Yu Chien

AU - Zheng, Zhi Wei

AU - Lin, Ming Huei

AU - Cheng, Chun Hu

AU - Liou, Guan Lin

AU - Hsu, Hsiao Hsuan

AU - Kao, Hsuan Ling

PY - 2017/9

Y1 - 2017/9

N2 - In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high Ion/Ioff of 5.7, ×,105 and a high μ FEof 10.7 cm2,V-1s-1. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6,×,103, a low threshold voltage of-0.13 V, and a very high field-effect mobility of 28 cm2V-1s-1. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

AB - In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high Ion/Ioff of 5.7, ×,105 and a high μ FEof 10.7 cm2,V-1s-1. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6,×,103, a low threshold voltage of-0.13 V, and a very high field-effect mobility of 28 cm2V-1s-1. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

KW - Flexible substrate

KW - plasma

KW - thin-film transistor (TFT)

KW - tin oxide (SnO)

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ER -

Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

Abstract

Keywords

ASJC Scopus subject areas

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