Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng, Ming Huei Lin, Chun Hu Cheng, Guan Lin Liou, Hsiao Hsuan Hsu, Hsuan Ling Kao

Research output: Contribution to journalArticle

5 Citations (Scopus)


In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high Ion/Ioff of 5.7, ×,105 and a high μ FEof 10.7 cm2,V-1s-1. Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6,×,103, a low threshold voltage of-0.13 V, and a very high field-effect mobility of 28 cm2V-1s-1. This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

Original languageEnglish
Article number7959132
Pages (from-to)876-879
Number of pages4
JournalIEEE Transactions on Nanotechnology
Issue number5
Publication statusPublished - 2017 Sep 1



  • Flexible substrate
  • plasma
  • thin-film transistor (TFT)
  • tin oxide (SnO)

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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