TY - GEN
T1 - Far-IR reflectance spectra analysis of CdZnTe and related materials
AU - Yang, Tzuen Rong
AU - Jhang, Sheng Hong
AU - Shih, Yen Hao
AU - Hou, Fu Chung
AU - Yang, Yu Chang
AU - Becla, P.
AU - Tien, Der Chi
AU - Feng, Zhe Chuan
PY - 2009
Y1 - 2009
N2 - Far-infrared (FIR) reflectance spectroscopy has been employed to study the optical properties for a series of bulk CdZnxTe1-x and CdSexTe1-x wafers. The zone-centre optical phonons for the ternary alloys show a variety of behavior patterns: they exhibit a "one-mode", "two-mode" or "intermediate-mode" behavior depending on the vibration characteristics of the end binary members. The CdSeTe called CST were found to be single-crystal with the zincblende structure. These four samples labeled with CST5, CST15, CST25, and CST35, which correspond with the composition of Se, 5%, 15%, 25%, 35%, respectively. The intensity of CdTe-like TO band decays with x increasing, and the peak position increases from 140 cm-1 to 145 cm-1. In the other hand, the intensity of CdSe-like TO band grows with x increasing, and the peak position of CdSe-like TO band increases from 174 cm-1 to 181 cm-1. We use the model of dielectric function and using Least-Square fit to find the optical and transport parameters. By the infrared spectra analysis, we found the conductivity of CdZnxTe1-x increase with increasing of x value and the conductivity of CdSe xTe1-x decrease with increasing of x value.
AB - Far-infrared (FIR) reflectance spectroscopy has been employed to study the optical properties for a series of bulk CdZnxTe1-x and CdSexTe1-x wafers. The zone-centre optical phonons for the ternary alloys show a variety of behavior patterns: they exhibit a "one-mode", "two-mode" or "intermediate-mode" behavior depending on the vibration characteristics of the end binary members. The CdSeTe called CST were found to be single-crystal with the zincblende structure. These four samples labeled with CST5, CST15, CST25, and CST35, which correspond with the composition of Se, 5%, 15%, 25%, 35%, respectively. The intensity of CdTe-like TO band decays with x increasing, and the peak position increases from 140 cm-1 to 145 cm-1. In the other hand, the intensity of CdSe-like TO band grows with x increasing, and the peak position of CdSe-like TO band increases from 174 cm-1 to 181 cm-1. We use the model of dielectric function and using Least-Square fit to find the optical and transport parameters. By the infrared spectra analysis, we found the conductivity of CdZnxTe1-x increase with increasing of x value and the conductivity of CdSe xTe1-x decrease with increasing of x value.
UR - http://www.scopus.com/inward/record.url?scp=71449084031&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71449084031&partnerID=8YFLogxK
U2 - 10.1117/12.825874
DO - 10.1117/12.825874
M3 - Conference contribution
AN - SCOPUS:71449084031
SN - 9780819477392
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI
T2 - Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI
Y2 - 3 August 2009 through 6 August 2009
ER -