Far-IR investigation of thin InGaN layers

Tzuen-Rong Yang, M. M. Dvoynenko, Y. F. Cheng, Z. C. Feng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have measured the reflection spectra of ultra-thin InxGa1-xN/GaN layers on sapphire substrates with thick GaN buffer layer at temperatures of 300, 200 and 90K. We could not observe any signal associated with these layers. Comparing the measured spectra with the calculated ones for well-mixed InxGa1-xN layers, we concluded that our samples had no mixed state. We also concluded that the separated In and N atoms did not form InN layers. The reason for the fact that we did not observe a response from these layers is the inhomogeneous broadening of the InxGa1-xN reflection line. We have calculated the absorption spectra of small parallelepiped-like InN particles in the GaN matrix. It has shown that the absorption line width for such small parallelepiped-like particles is bigger than that for the bulk InN material. We concluded that our samples contained separated In and demonstrated formation of InN clusters.

Original languageEnglish
Pages (from-to)268-278
Number of pages11
JournalPhysica B: Condensed Matter
Volume324
Issue number1-4
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

Aluminum Oxide
Buffer layers
Sapphire
Linewidth
parallelepipeds
Absorption spectra
Atoms
Substrates
Temperature
sapphire
buffers
absorption spectra
matrices
atoms
temperature

Keywords

  • Absorption of nanoparticles
  • IR spectroscopy
  • InGaN
  • Mixed crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Far-IR investigation of thin InGaN layers. / Yang, Tzuen-Rong; Dvoynenko, M. M.; Cheng, Y. F.; Feng, Z. C.

In: Physica B: Condensed Matter, Vol. 324, No. 1-4, 01.11.2002, p. 268-278.

Research output: Contribution to journalArticle

Yang, T-R, Dvoynenko, MM, Cheng, YF & Feng, ZC 2002, 'Far-IR investigation of thin InGaN layers', Physica B: Condensed Matter, vol. 324, no. 1-4, pp. 268-278. https://doi.org/10.1016/S0921-4526(02)01412-6
Yang, Tzuen-Rong ; Dvoynenko, M. M. ; Cheng, Y. F. ; Feng, Z. C. / Far-IR investigation of thin InGaN layers. In: Physica B: Condensed Matter. 2002 ; Vol. 324, No. 1-4. pp. 268-278.
@article{f9d39258ccce4ba2bb003930eb98438d,
title = "Far-IR investigation of thin InGaN layers",
abstract = "We have measured the reflection spectra of ultra-thin InxGa1-xN/GaN layers on sapphire substrates with thick GaN buffer layer at temperatures of 300, 200 and 90K. We could not observe any signal associated with these layers. Comparing the measured spectra with the calculated ones for well-mixed InxGa1-xN layers, we concluded that our samples had no mixed state. We also concluded that the separated In and N atoms did not form InN layers. The reason for the fact that we did not observe a response from these layers is the inhomogeneous broadening of the InxGa1-xN reflection line. We have calculated the absorption spectra of small parallelepiped-like InN particles in the GaN matrix. It has shown that the absorption line width for such small parallelepiped-like particles is bigger than that for the bulk InN material. We concluded that our samples contained separated In and demonstrated formation of InN clusters.",
keywords = "Absorption of nanoparticles, IR spectroscopy, InGaN, Mixed crystals",
author = "Tzuen-Rong Yang and Dvoynenko, {M. M.} and Cheng, {Y. F.} and Feng, {Z. C.}",
year = "2002",
month = "11",
day = "1",
doi = "10.1016/S0921-4526(02)01412-6",
language = "English",
volume = "324",
pages = "268--278",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Far-IR investigation of thin InGaN layers

AU - Yang, Tzuen-Rong

AU - Dvoynenko, M. M.

AU - Cheng, Y. F.

AU - Feng, Z. C.

PY - 2002/11/1

Y1 - 2002/11/1

N2 - We have measured the reflection spectra of ultra-thin InxGa1-xN/GaN layers on sapphire substrates with thick GaN buffer layer at temperatures of 300, 200 and 90K. We could not observe any signal associated with these layers. Comparing the measured spectra with the calculated ones for well-mixed InxGa1-xN layers, we concluded that our samples had no mixed state. We also concluded that the separated In and N atoms did not form InN layers. The reason for the fact that we did not observe a response from these layers is the inhomogeneous broadening of the InxGa1-xN reflection line. We have calculated the absorption spectra of small parallelepiped-like InN particles in the GaN matrix. It has shown that the absorption line width for such small parallelepiped-like particles is bigger than that for the bulk InN material. We concluded that our samples contained separated In and demonstrated formation of InN clusters.

AB - We have measured the reflection spectra of ultra-thin InxGa1-xN/GaN layers on sapphire substrates with thick GaN buffer layer at temperatures of 300, 200 and 90K. We could not observe any signal associated with these layers. Comparing the measured spectra with the calculated ones for well-mixed InxGa1-xN layers, we concluded that our samples had no mixed state. We also concluded that the separated In and N atoms did not form InN layers. The reason for the fact that we did not observe a response from these layers is the inhomogeneous broadening of the InxGa1-xN reflection line. We have calculated the absorption spectra of small parallelepiped-like InN particles in the GaN matrix. It has shown that the absorption line width for such small parallelepiped-like particles is bigger than that for the bulk InN material. We concluded that our samples contained separated In and demonstrated formation of InN clusters.

KW - Absorption of nanoparticles

KW - IR spectroscopy

KW - InGaN

KW - Mixed crystals

UR - http://www.scopus.com/inward/record.url?scp=0036849720&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036849720&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(02)01412-6

DO - 10.1016/S0921-4526(02)01412-6

M3 - Article

AN - SCOPUS:0036849720

VL - 324

SP - 268

EP - 278

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -