In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.
- Infrared absorption
- Ion implantation doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering