Abstract
In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.
Original language | English |
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Pages (from-to) | 2103-2104 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 284-288 |
Issue number | PART II |
DOIs | |
Publication status | Published - 2000 |
Keywords
- InSb
- Infrared absorption
- Ion implantation doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering