Far-infrared absorption studies in MeV C+ and C2+ implanted InSb (111) crystals

T. R. Yang; G. Kuri; C. C. Lu

doi:10.1016/S0921-4526(99)02991-9

Far-infrared absorption studies in MeV C⁺ and C₂⁺ implanted InSb (111) crystals

T. R. Yang, G. Kuri^*, C. C. Lu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C⁺ and C₂⁺ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C⁺ and C₂⁺ implantations. It is found from the FIR data that, in C₂⁺ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C⁺ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C₂⁺ irradiated specimen is enhanced compared to the C⁺ implantation. The results are attributed to the non-linear damage distribution due to C₂⁺ and the substitutional lattice site occupation of the implanted C atoms.

Original language	English
Pages (from-to)	2103-2104
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02991-9
Publication status	Published - 2000

Keywords

InSb
Infrared absorption
Ion implantation doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(99)02991-9

Cite this

@article{484da44b31ff471d8873a9ef8ed8f282,

title = "Far-infrared absorption studies in MeV C+ and C2+ implanted InSb (111) crystals",

abstract = "In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.",

keywords = "InSb, Infrared absorption, Ion implantation doping",

author = "Yang, {T. R.} and G. Kuri and Lu, {C. C.}",

year = "2000",

doi = "10.1016/S0921-4526(99)02991-9",

language = "English",

volume = "284-288",

pages = "2103--2104",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier BV",

number = "PART II",

}

TY - JOUR

T1 - Far-infrared absorption studies in MeV C+ and C2+ implanted InSb (111) crystals

AU - Yang, T. R.

AU - Kuri, G.

AU - Lu, C. C.

PY - 2000

Y1 - 2000

N2 - In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.

AB - In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.

KW - InSb

KW - Infrared absorption

KW - Ion implantation doping

UR - http://www.scopus.com/inward/record.url?scp=0033688693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033688693&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)02991-9

DO - 10.1016/S0921-4526(99)02991-9

M3 - Article

AN - SCOPUS:0033688693

SN - 0921-4526

VL - 284-288

SP - 2103

EP - 2104

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART II

ER -