Far-infrared absorption studies in MeV C+ and C2+ implanted InSb (111) crystals

T. R. Yang, G. Kuri, C. C. Lu

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Abstract

In this work, we briefly report on far-infrared absorption (FIR) studies on MeV C+ and C2+ implanted InSb crystals in order to investigate the quality of the implanted layers and the basic difference in the C+ and C2+ implantations. It is found from the FIR data that, in C2+ implanted InSb samples, the transverse optical mode profile is broadened as compared to the samples implanted with C+ at the same energy/atoms and at a constant fluence. A detailed analysis shows that the conductivity in C2+ irradiated specimen is enhanced compared to the C+ implantation. The results are attributed to the non-linear damage distribution due to C2+ and the substitutional lattice site occupation of the implanted C atoms.

Original languageEnglish
Pages (from-to)2103-2104
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 2000 Jan 1

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Keywords

  • InSb
  • Infrared absorption
  • Ion implantation doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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