Fabrication of ultra-sharp single atom tips

Tsu-Yi Fu; Chia Lun Chiang; Rung Jiun Lin; Jin Long Hou; Hong Shi Kuo; Ing Shouh Hwang; Tien T. Tsong

doi:10.1109/INEC.2010.5424585

Fabrication of ultra-sharp single atom tips

Tsu-Yi Fu, Chia Lun Chiang, Rung Jiun Lin, Jin Long Hou, Hong Shi Kuo, Ing Shouh Hwang, Tien T. Tsong

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ultra high vacuum - field ion microscopy (UHV-FIM) with atomic resolution was used to study the methods of preparing ultra-sharp single atom tips. Several treatments including annealing, depositing, exposing to special gas, keep in a given atmosphere, and so on were the possible tactics to sharpen the tips. The sharpen results of various treatments were observed by field ion microscope. Two kinds of magnetic nano tips were formed. One is a PtCo pyramidal tip formed by surface faceting, the other is a Pt based Co tip formed by the SK mode epitaxy.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	142-143
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424585
Publication status	Published - 2010 May 5
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	2010/01/03 → 2010/01/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424585

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title = "Fabrication of ultra-sharp single atom tips",

abstract = "Ultra high vacuum - field ion microscopy (UHV-FIM) with atomic resolution was used to study the methods of preparing ultra-sharp single atom tips. Several treatments including annealing, depositing, exposing to special gas, keep in a given atmosphere, and so on were the possible tactics to sharpen the tips. The sharpen results of various treatments were observed by field ion microscope. Two kinds of magnetic nano tips were formed. One is a PtCo pyramidal tip formed by surface faceting, the other is a Pt based Co tip formed by the SK mode epitaxy.",

author = "Tsu-Yi Fu and Chiang, {Chia Lun} and Lin, {Rung Jiun} and Hou, {Jin Long} and Kuo, {Hong Shi} and Hwang, {Ing Shouh} and Tsong, {Tien T.}",

year = "2010",

month = may,

day = "5",

doi = "10.1109/INEC.2010.5424585",

language = "English",

isbn = "9781424435449",

pages = "142--143",

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note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

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T1 - Fabrication of ultra-sharp single atom tips

AU - Fu, Tsu-Yi

AU - Chiang, Chia Lun

AU - Lin, Rung Jiun

AU - Hou, Jin Long

AU - Kuo, Hong Shi

AU - Hwang, Ing Shouh

AU - Tsong, Tien T.

PY - 2010/5/5

Y1 - 2010/5/5

N2 - Ultra high vacuum - field ion microscopy (UHV-FIM) with atomic resolution was used to study the methods of preparing ultra-sharp single atom tips. Several treatments including annealing, depositing, exposing to special gas, keep in a given atmosphere, and so on were the possible tactics to sharpen the tips. The sharpen results of various treatments were observed by field ion microscope. Two kinds of magnetic nano tips were formed. One is a PtCo pyramidal tip formed by surface faceting, the other is a Pt based Co tip formed by the SK mode epitaxy.

AB - Ultra high vacuum - field ion microscopy (UHV-FIM) with atomic resolution was used to study the methods of preparing ultra-sharp single atom tips. Several treatments including annealing, depositing, exposing to special gas, keep in a given atmosphere, and so on were the possible tactics to sharpen the tips. The sharpen results of various treatments were observed by field ion microscope. Two kinds of magnetic nano tips were formed. One is a PtCo pyramidal tip formed by surface faceting, the other is a Pt based Co tip formed by the SK mode epitaxy.

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DO - 10.1109/INEC.2010.5424585

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SN - 9781424435449

SP - 142

EP - 143

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

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