Fabrication of single-electron transistors based on proximity effects of electron-beam lithography

Shu Fen Hu, Yi Pin Fang, Ya Chang Chou, Gwo Jen Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A simple method, based on the proximity effects of electron-beam lithography, which caused by overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nanostructure containing narrow constrictions. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot.

Original languageEnglish
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages47-49
Number of pages3
Publication statusPublished - 2004 Dec 1
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: 2004 Aug 162004 Aug 19

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period04/8/1604/8/19

Keywords

  • Electron-beam lithography
  • Etching
  • Flexible
  • Gaussian distributions
  • Oxidation
  • Proximity
  • Quantum dot
  • Tunnel junctions

ASJC Scopus subject areas

  • Engineering(all)

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    Hu, S. F., Fang, Y. P., Chou, Y. C., & Hwang, G. J. (2004). Fabrication of single-electron transistors based on proximity effects of electron-beam lithography. In 2004 4th IEEE Conference on Nanotechnology (pp. 47-49). (2004 4th IEEE Conference on Nanotechnology).