INIS
fabrication
100%
nanowires
100%
silicon
100%
electron beams
100%
proximity effect
100%
oscillations
25%
size
25%
layers
25%
accumulation
25%
substrates
25%
voltage
25%
electrons
25%
wires
25%
nonlinear problems
25%
peaks
25%
one-dimensional calculations
25%
thermal effects
25%
Engineering
Electron Optical Lithography
100%
Nanowire
100%
Proximity Effect
100%
Silicon Substrate
50%
One Dimensional
50%
Single Electron
50%
Silicon Layer
50%
Current-Voltage Characteristic
50%
Silicon Dioxide
50%
Thermal Effect
50%
Nonlinearity
50%
Conductance Peak
50%
Material Science
Nanowire
100%
Silicon
100%
Lithography
100%
Current Voltage Characteristics
25%
Earth and Planetary Sciences
Electron Beam
100%
Nanowire
100%
Nonlinearity
50%