Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

S. F. Hu; W. C. Weng; Y. M. Wan

doi:10.1016/j.ssc.2004.01.015

Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

S. F. Hu^*, W. C. Weng, Y. M. Wan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO₂. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Original language	English
Pages (from-to)	111-114
Number of pages	4
Journal	Solid State Communications
Volume	130
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2004.01.015
Publication status	Published - 2004 Apr
Externally published	Yes

Keywords

A. Nanostructures
B. Nanofabrications

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2004.01.015

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@article{5f92a87da0804161ae7da2a1bc77568a,

title = "Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography",

abstract = "One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.",

keywords = "A. Nanostructures, B. Nanofabrications",

author = "Hu, {S. F.} and Weng, {W. C.} and Wan, {Y. M.}",

note = "Funding Information: This work were financially supported by National Science Council of Republic of China under the contract No. NSC92-2215-E-492-008.Technical supports from the members of National Nano Device Laboratories are acknowledged.",

year = "2004",

month = apr,

doi = "10.1016/j.ssc.2004.01.015",

language = "English",

volume = "130",

pages = "111--114",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "1-2",

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TY - JOUR

T1 - Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

AU - Hu, S. F.

AU - Weng, W. C.

AU - Wan, Y. M.

N1 - Funding Information: This work were financially supported by National Science Council of Republic of China under the contract No. NSC92-2215-E-492-008.Technical supports from the members of National Nano Device Laboratories are acknowledged.

PY - 2004/4

Y1 - 2004/4

N2 - One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

AB - One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

KW - A. Nanostructures

KW - B. Nanofabrications

UR - http://www.scopus.com/inward/record.url?scp=1442285850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1442285850&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2004.01.015

DO - 10.1016/j.ssc.2004.01.015

M3 - Article

AN - SCOPUS:1442285850

SN - 0038-1098

VL - 130

SP - 111

EP - 114

JO - Solid State Communications

JF - Solid State Communications

IS - 1-2

ER -

Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

Abstract

Keywords

ASJC Scopus subject areas

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