Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

Shu-Fen Hu, W. C. Weng, Y. M. Wan

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalSolid State Communications
Volume130
Issue number1-2
DOIs
Publication statusPublished - 2004 Apr 1

Fingerprint

Electron beam lithography
Silicon
Nanowires
nanowires
lithography
electron beams
Fabrication
fabrication
silicon
Current voltage characteristics
Thermal effects
temperature effects
nonlinearity
wire
Wire
conductivity
oscillations
Electrons
electric potential
Substrates

Keywords

  • A. Nanostructures
  • B. Nanofabrications

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography. / Hu, Shu-Fen; Weng, W. C.; Wan, Y. M.

In: Solid State Communications, Vol. 130, No. 1-2, 01.04.2004, p. 111-114.

Research output: Contribution to journalArticle

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