Fabrication of silicon nanowire structures based on proximity effects of electron-beam lithography

S. F. Hu, W. C. Weng, Y. M. Wan

Research output: Contribution to journalArticle

13 Citations (Scopus)


One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 35 to 200 K show significant non-linearities and conductance peaks indicating the existence of single-electron behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalSolid State Communications
Issue number1-2
Publication statusPublished - 2004 Apr 1



  • A. Nanostructures
  • B. Nanofabrications

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this