Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography

S. F. Hu; C. L. Sung

doi:10.1557/proc-862-a8.6

Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography

S. F. Hu^*, C. L. Sung

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO₂. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Original language	English
Article number	A8.6
Pages (from-to)	357-362
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	862
DOIs	https://doi.org/10.1557/proc-862-a8.6
Publication status	Published - 2005
Externally published	Yes
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 2005 Mar 28 → 2005 Apr 1

Keywords

A. Nanostructures
B. Nanofabrications

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-862-a8.6

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title = "Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography",

abstract = "One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.",

keywords = "A. Nanostructures, B. Nanofabrications",

author = "Hu, {S. F.} and Sung, {C. L.}",

year = "2005",

doi = "10.1557/proc-862-a8.6",

language = "English",

volume = "862",

pages = "357--362",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 Materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

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TY - JOUR

T1 - Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography

AU - Hu, S. F.

AU - Sung, C. L.

PY - 2005

Y1 - 2005

N2 - One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

AB - One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

KW - A. Nanostructures

KW - B. Nanofabrications

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DO - 10.1557/proc-862-a8.6

M3 - Conference article

AN - SCOPUS:30544436644

SN - 0272-9172

VL - 862

SP - 357

EP - 362

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - A8.6

T2 - 2005 Materials Research Society Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography

Abstract

Keywords

ASJC Scopus subject areas

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