Fabrication of one-dimensional silicon nano-wires based on proximity effects of electron-beam lithography

S. F. Hu, C. L. Sung

Research output: Contribution to journalConference article


One-dimensional silicon nanowire structures have been successfully made by using the proximity and accumulation effects of electron-beam (e-beam) lithography. Wire structures are fabricated in a thin poly silicon layer on a silicon substrate with a 400 nm buried SiO2. Measurements of the current-voltage characteristics at various temperatures from 4 K up to 300 K show significant nonlinearities and single-electron effect behavior. The blockade size is significantly affected by thermal effects, oscillations of the blockade, and the conductivity dependence on the gate potential.

Original languageEnglish
Article numberA8.6
Pages (from-to)357-362
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 2005 Jan 1
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 2005 Mar 282005 Apr 1



  • A. Nanostructures
  • B. Nanofabrications

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this