Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition

Chun Chieh Chang; Dan Botez; Lei Wan; Paul F. Nealey; Steven Ruder; Thomas F. Kuech

doi:10.1116/1.4798464

Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition

Chun Chieh Chang^*, Dan Botez, Lei Wan, Paul F. Nealey, Steven Ruder, Thomas F. Kuech

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Large-area, ultradense Ni nanopillar arrays were fabricated directly on bare n-GaAs substrates using diblock copolymer lithography and electrodeposition. The Ni nanopillar arrays are hexagonally arranged, exhibiting an average pillar diameter of ∼24 nm, and an areal density of ∼10 ¹¹/cm² over an entire surface area of 1 cm × 1 cm. These arrays represent large-scale, highly dense, sub-30 nm metal-nanopillar arrays made on III-V semiconductor substrates suitable as pattern masks. The fabrication method offers a simple and effective route to manufacturing large-area, highly dense, sub-30 nm metal nanostructures for III-V optoelectronic devices, in order to enhance their performance and functionalities.

Original language	English
Article number	031801
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4798464
Publication status	Published - 2013 May
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition. / Chang, Chun Chieh; Botez, Dan; Wan, Lei et al.
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, No. 3, 031801, 05.2013.

Research output: Contribution to journal › Article › peer-review

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title = "Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition",

abstract = "Large-area, ultradense Ni nanopillar arrays were fabricated directly on bare n-GaAs substrates using diblock copolymer lithography and electrodeposition. The Ni nanopillar arrays are hexagonally arranged, exhibiting an average pillar diameter of ∼24 nm, and an areal density of ∼10 11/cm2 over an entire surface area of 1 cm × 1 cm. These arrays represent large-scale, highly dense, sub-30 nm metal-nanopillar arrays made on III-V semiconductor substrates suitable as pattern masks. The fabrication method offers a simple and effective route to manufacturing large-area, highly dense, sub-30 nm metal nanostructures for III-V optoelectronic devices, in order to enhance their performance and functionalities.",

author = "Chang, {Chun Chieh} and Dan Botez and Lei Wan and Nealey, {Paul F.} and Steven Ruder and Kuech, {Thomas F.}",

note = "Funding Information: This work was supported by the National Science Foundation under Grant No. ECCS-0925104. The authors gratefully acknowledge use of facilities and instrumentation supported by the University of Wisconsin Materials Research Science and Engineering Center (DMR-1121288). C.-C. Chang would like to thank Chi-Chun Liu, Monika K. Wiedmann, and Tzu-Hsuan Chang for valuable discussions.",

year = "2013",

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AU - Chang, Chun Chieh

AU - Botez, Dan

AU - Wan, Lei

AU - Nealey, Paul F.

AU - Ruder, Steven

AU - Kuech, Thomas F.

N1 - Funding Information: This work was supported by the National Science Foundation under Grant No. ECCS-0925104. The authors gratefully acknowledge use of facilities and instrumentation supported by the University of Wisconsin Materials Research Science and Engineering Center (DMR-1121288). C.-C. Chang would like to thank Chi-Chun Liu, Monika K. Wiedmann, and Tzu-Hsuan Chang for valuable discussions.

PY - 2013/5

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N2 - Large-area, ultradense Ni nanopillar arrays were fabricated directly on bare n-GaAs substrates using diblock copolymer lithography and electrodeposition. The Ni nanopillar arrays are hexagonally arranged, exhibiting an average pillar diameter of ∼24 nm, and an areal density of ∼10 11/cm2 over an entire surface area of 1 cm × 1 cm. These arrays represent large-scale, highly dense, sub-30 nm metal-nanopillar arrays made on III-V semiconductor substrates suitable as pattern masks. The fabrication method offers a simple and effective route to manufacturing large-area, highly dense, sub-30 nm metal nanostructures for III-V optoelectronic devices, in order to enhance their performance and functionalities.

AB - Large-area, ultradense Ni nanopillar arrays were fabricated directly on bare n-GaAs substrates using diblock copolymer lithography and electrodeposition. The Ni nanopillar arrays are hexagonally arranged, exhibiting an average pillar diameter of ∼24 nm, and an areal density of ∼10 11/cm2 over an entire surface area of 1 cm × 1 cm. These arrays represent large-scale, highly dense, sub-30 nm metal-nanopillar arrays made on III-V semiconductor substrates suitable as pattern masks. The fabrication method offers a simple and effective route to manufacturing large-area, highly dense, sub-30 nm metal nanostructures for III-V optoelectronic devices, in order to enhance their performance and functionalities.

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Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition

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