Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition

Chun Chieh Chang*, Dan Botez, Lei Wan, Paul F. Nealey, Steven Ruder, Thomas F. Kuech

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Large-area, ultradense Ni nanopillar arrays were fabricated directly on bare n-GaAs substrates using diblock copolymer lithography and electrodeposition. The Ni nanopillar arrays are hexagonally arranged, exhibiting an average pillar diameter of ∼24 nm, and an areal density of ∼10 11/cm2 over an entire surface area of 1 cm × 1 cm. These arrays represent large-scale, highly dense, sub-30 nm metal-nanopillar arrays made on III-V semiconductor substrates suitable as pattern masks. The fabrication method offers a simple and effective route to manufacturing large-area, highly dense, sub-30 nm metal nanostructures for III-V optoelectronic devices, in order to enhance their performance and functionalities.

Original languageEnglish
Article number031801
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
Publication statusPublished - 2013 May
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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