Fabrication of 3D macroporous structures of II-VI and III-V semiconductors using electrochemical deposition

Yi Cheng Lee, Tsung Jung Kuo, Chih Jung Hsu, Ya Wen Su, Chia Chun Chen

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Close-packed three-dimensional (3D) arrays of silica spheres assembled on an indium tin oxide (ITO) substrate surface have been prepared using sedimentation in the solution. Both galvanostatic and potentiostatic electrochemical depositions have been tested to infiltrate six different semiconductors, ZnSe, PbSe, CdSe, CdS, CdTe, and GaAs, onto the 3D silica arrays. The detailed studies of deposition parameters such as current density, deposition time, concentrations of electrolytes, solvents, and temperatures were performed to ensure the quality of resulting semiconductor films on the arrays. Followed by the removal of the silica arrays, 3D macroporous structures made from those semiconductors were obtained, and the structures exhibited 3D periodicity and uniformity. Clear diffraction peaks at ∼1350 nm of CdSe and CdS macroporous films were observed.

Original languageEnglish
Pages (from-to)9942-9946
Number of pages5
Issue number25
Publication statusPublished - 2002 Dec 10


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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