Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co

U. Tipparach, T. P. Chen, J. L. Wagner, K. Wu, Q. Y. Chen, Q. Li, J. T. Wang, H. C. Yang, H. E. Horng

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

    Original languageEnglish
    Pages (from-to)404-407
    Number of pages4
    JournalPhysica C: Superconductivity and its applications
    Volume364-365
    DOIs
    Publication statusPublished - 2001 Nov 1

    Keywords

    • Crystal structure
    • Electrical resistivity
    • Pr123

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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