Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co

U. Tipparach, T. P. Chen, J. L. Wagner, K. Wu, Q. Y. Chen, Q. Li, J. T. Wang, H. C. Yang, H. E. Horng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

Original languageEnglish
Pages (from-to)404-407
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume364-365
DOIs
Publication statusPublished - 2001 Nov 1

Fingerprint

Doping (additives)
Fabrication
fabrication
Buffer layers
Lattice constants
Phase transitions
Networks (circuits)
lattice parameters
buffers
electrical resistivity
electronics
barium copper yttrium oxide

Keywords

  • Crystal structure
  • Electrical resistivity
  • Pr123

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Fabrication and transport studies on PrBa2(Cu1-xMx)3O7 : M = Ga, Zn, and Co. / Tipparach, U.; Chen, T. P.; Wagner, J. L.; Wu, K.; Chen, Q. Y.; Li, Q.; Wang, J. T.; Yang, H. C.; Horng, H. E.

In: Physica C: Superconductivity and its applications, Vol. 364-365, 01.11.2001, p. 404-407.

Research output: Contribution to journalArticle

Tipparach, U. ; Chen, T. P. ; Wagner, J. L. ; Wu, K. ; Chen, Q. Y. ; Li, Q. ; Wang, J. T. ; Yang, H. C. ; Horng, H. E. / Fabrication and transport studies on PrBa2(Cu1-xMx)3O7 : M = Ga, Zn, and Co. In: Physica C: Superconductivity and its applications. 2001 ; Vol. 364-365. pp. 404-407.
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AU - Chen, T. P.

AU - Wagner, J. L.

AU - Wu, K.

AU - Chen, Q. Y.

AU - Li, Q.

AU - Wang, J. T.

AU - Yang, H. C.

AU - Horng, H. E.

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N2 - We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

AB - We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

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