Fabrication and characterization of oxide heterojunctions prepared by electrodepositing cuprous oxide on conductive glasses

Fu Yung Hsu, Shiu Jen Liu, Yung I. Lu, Liang Yu Chen, Hau Wei Fang

Research output: Contribution to journalArticle

3 Citations (Scopus)


The properties of oxide heterojunctions prepared by electrodepositing Cu2O on commercial F-doped SnO2 (FTO) and Sn-doped In 2O3 (ITO) glasses were studied. The X-ray diffraction patterns showed that Cu2O films grown on both FTO and ITO glasses are mainly (111)-oriented. The optical band gap of the electrodeposited Cu 2O films grown on FTO glass determined from the absorption spectrum is about 2eV. A peak with a wavelength of 622nm that could be correlated to the near band edge emission was observed in the photoluminescence spectrum. Nonlinear and rectifying behaviors were observed in the current-voltage measurements of these fabricated heterojunctions. Furthermore, the high turn-on voltage of 4.7 V indicates the absence of defect states at the interface of the Cu2O/FTO heterojunction. Moreover, thermal annealing on Cu 2O/FTO heterojunctions may cause Cu diffusion into the n-type layers.

Original languageEnglish
Number of pages1
JournalJapanese Journal of Applied Physics
Issue number3
Publication statusPublished - 2009 Mar 1


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this