Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates

Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, S. C. Wang

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Characteristics of GaN -based light-emitting diodes (LEDs) grown on the chemical wet-etched patterned sapphire substrates (CWE-PSS) with different crystallography-etched facets were investigated. An improvement of 40% on the overall quantum efficiency was achieved by adopting this CWE-PSS scheme. A Monte Carlo ray-tracing method was employed to derive the optimized condition of sapphire etching time, and the calculated result demonstrated the same trend with real device measurement. Adopting the CWE-PSS in LEDs could not only improve the epitaxial quality but also increase the extraction quantum efficiency due to crystallography-etched facets efficiently scattering the guided light to enter the escape cone on the top of device surfaces. Finally, we observed better aging behaviors of CWE-PSS LEDs, which could be due to the reduction of threading dislocations of the epitaxial layers.The Electrochemical Society

Original languageEnglish
Article number074612JES
Pages (from-to)G1106-G1111
JournalJournal of the Electrochemical Society
Volume153
Issue number12
DOIs
Publication statusPublished - 2006 Nov 14

Fingerprint

Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
Fabrication
fabrication
Substrates
Crystallography
Quantum efficiency
crystallography
quantum efficiency
flat surfaces
Epitaxial layers
Ray tracing
Dislocations (crystals)
ray tracing
escape
Cones
Etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates. / Lee, Y. J.; Kuo, H. C.; Lu, T. C.; Su, B. J.; Wang, S. C.

In: Journal of the Electrochemical Society, Vol. 153, No. 12, 074612JES, 14.11.2006, p. G1106-G1111.

Research output: Contribution to journalArticle

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