Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates

Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, S. C. Wang

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Characteristics of GaN -based light-emitting diodes (LEDs) grown on the chemical wet-etched patterned sapphire substrates (CWE-PSS) with different crystallography-etched facets were investigated. An improvement of 40% on the overall quantum efficiency was achieved by adopting this CWE-PSS scheme. A Monte Carlo ray-tracing method was employed to derive the optimized condition of sapphire etching time, and the calculated result demonstrated the same trend with real device measurement. Adopting the CWE-PSS in LEDs could not only improve the epitaxial quality but also increase the extraction quantum efficiency due to crystallography-etched facets efficiently scattering the guided light to enter the escape cone on the top of device surfaces. Finally, we observed better aging behaviors of CWE-PSS LEDs, which could be due to the reduction of threading dislocations of the epitaxial layers.The Electrochemical Society

Original languageEnglish
Article number074612JES
Pages (from-to)G1106-G1111
JournalJournal of the Electrochemical Society
Issue number12
Publication statusPublished - 2006 Nov 14


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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