Fabrication and characterization of Co(11̄00)/Mo(211) and Co(112̄0)/Mo(100) bilayered films on MgO

Y. D. Yao; Y. Liou; J. C.A. Huang; S. Y. Liao; I. Klik; C. P. Chang; C. K. Lo

doi:10.1109/20.539113

Fabrication and characterization of Co(11̄00)/Mo(211) and Co(112̄0)/Mo(100) bilayered films on MgO

Y. D. Yao^*
, Y. Liou
, J. C.A. Huang
, S. Y. Liao
, I. Klik
, C. P. Chang
, C. K. Lo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and x-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(112̄0)/Mo(100) on MgO(100) and of uniaxial Co(11̄00)/Mo(211) on MgO(11̄00) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(112̄0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(11̄00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 °K.

Original language	English
Pages (from-to)	4669-4671
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539113
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.539113

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@article{9b480b4e449b40efab7e6e7c95d4de21,

title = "Fabrication and characterization of Co(1{\=1}00)/Mo(211) and Co(11{\=2}0)/Mo(100) bilayered films on MgO",

abstract = "Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and x-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(11{\=2}0)/Mo(100) on MgO(100) and of uniaxial Co(1{\=1}00)/Mo(211) on MgO(1{\=1}00) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(11{\=2}0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(1{\=1}00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 °K.",

author = "Yao, \{Y. D.\} and Y. Liou and Huang, \{J. C.A.\} and Liao, \{S. Y.\} and I. Klik and Chang, \{C. P.\} and Lo, \{C. K.\}",

note = "Funding Information: The thickness of the Co-layer for all the samples in this study was fixed at 200 A and the thickness of the Mo layer was varied between 20 and 100 A. The structure arrangement of both Co and Mo layers in the CoMo bilayered films is af€ected considerably by the choice of the interface direction of the MgO substrate. In this study, the CoNo bilayer films were CoNo bilayered films of C0(1\textasciitilde{}00)M0(211) on simultaneously grown on MgO(100) and on MgO(110) MgO( 110) and Co( 11?0)/Mo(100) on MgO( 100) have been substrates. Their crystalline orientation and quality were determined by XRD and =ED. In general, for Co grown on MgO( 100) substrate without a buffer layer, an fcc-Co film with Manuscript received March 15, 1996. (100) planes growth can be formed for Co thickness of roughly fax: (886-2) 7834187. Y. D. Yao, email: [email protected], 60 A or more [SI. In this study, we show that if a thin buffer This work was sponsored in part by the National Science CouncJ of the R. 0. layer of Ma is grown on MgO, an hcp-Co film can be obtained.",

year = "1996",

doi = "10.1109/20.539113",

language = "English",

volume = "32",

pages = "4669--4671",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

}

TY - JOUR

T1 - Fabrication and characterization of Co(11̄00)/Mo(211) and Co(112̄0)/Mo(100) bilayered films on MgO

AU - Yao, Y. D.

AU - Liou, Y.

AU - Huang, J. C.A.

AU - Liao, S. Y.

AU - Klik, I.

AU - Chang, C. P.

AU - Lo, C. K.

N1 - Funding Information: The thickness of the Co-layer for all the samples in this study was fixed at 200 A and the thickness of the Mo layer was varied between 20 and 100 A. The structure arrangement of both Co and Mo layers in the CoMo bilayered films is af€ected considerably by the choice of the interface direction of the MgO substrate. In this study, the CoNo bilayer films were CoNo bilayered films of C0(1~00)M0(211) on simultaneously grown on MgO(100) and on MgO(110) MgO( 110) and Co( 11?0)/Mo(100) on MgO( 100) have been substrates. Their crystalline orientation and quality were determined by XRD and =ED. In general, for Co grown on MgO( 100) substrate without a buffer layer, an fcc-Co film with Manuscript received March 15, 1996. (100) planes growth can be formed for Co thickness of roughly fax: (886-2) 7834187. Y. D. Yao, email: [email protected], 60 A or more [SI. In this study, we show that if a thin buffer This work was sponsored in part by the National Science CouncJ of the R. 0. layer of Ma is grown on MgO, an hcp-Co film can be obtained.

PY - 1996

Y1 - 1996

N2 - Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and x-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(112̄0)/Mo(100) on MgO(100) and of uniaxial Co(11̄00)/Mo(211) on MgO(11̄00) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(112̄0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(11̄00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 °K.

AB - Co/Mo bilayered films have been successfully grown on MgO(100) and MgO(110) substrates by molecular beam epitaxy. According to the reflection high energy electron diffraction and x-ray diffraction measurements the crystal structure of the film depends on the orientation of the buffer and substrate. The growth of biaxial Co(112̄0)/Mo(100) on MgO(100) and of uniaxial Co(11̄00)/Mo(211) on MgO(11̄00) substrates has been confirmed. The anisotropic magnetoresistance (AMR) is strongly influenced by the Co orientation which is altered by growth on Mo/MgO(100) and MgO(110). In Co(112̄0)/Mo(100) on MgO(110) AMR is isotropic for all in-plane fields. However, for Co(11̄00)/Mo(211) on MgO(110) we observed enhancement of AMR along the easy axis at 10 °K.

UR - https://www.scopus.com/pages/publications/0030245344

UR - https://www.scopus.com/pages/publications/0030245344#tab=citedBy

U2 - 10.1109/20.539113

DO - 10.1109/20.539113

M3 - Article

AN - SCOPUS:0030245344

SN - 0018-9464

VL - 32

SP - 4669

EP - 4671

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 2

ER -

Fabrication and characterization of Co(11̄00)/Mo(211) and Co(112̄0)/Mo(100) bilayered films on MgO

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