Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

Hau Wei Fang; Shiu Jen Liu; Tsung Eong Hsieh; Jenh Yih Juang; Jang Hsing Hsieh

doi:10.1016/j.solener.2011.07.016

Fabrication and characterization of amorphous In-Zn-O/SiO_x/n-Si heterojunction solar cells

Hau Wei Fang, Shiu Jen Liu^*, Tsung Eong Hsieh, Jenh Yih Juang, Jang Hsing Hsieh

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Amorphous In-Zn-O (a-IZO) films were deposited on SiO_x covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO_x/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10^-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiO_x/n-Si solar cells is 2.2% under 100mW/cm² illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm² and 33.6%, respectively.

Original language	English
Pages (from-to)	2589-2594
Number of pages	6
Journal	Solar Energy
Volume	85
Issue number	11
DOIs	https://doi.org/10.1016/j.solener.2011.07.016
Publication status	Published - 2011 Nov

Keywords

Amorphous In-Zn-O film
Photovoltaic characteristics
Pulsed laser deposition
Semiconductor-insulator-semiconductor solar cell

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solener.2011.07.016

Cite this

@article{e6cde4cb86b54450b2e21cb1e8bc2bae,

title = "Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells",

abstract = "Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.",

keywords = "Amorphous In-Zn-O film, Photovoltaic characteristics, Pulsed laser deposition, Semiconductor-insulator-semiconductor solar cell",

author = "Fang, {Hau Wei} and Liu, {Shiu Jen} and Hsieh, {Tsung Eong} and Juang, {Jenh Yih} and Hsieh, {Jang Hsing}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .",

year = "2011",

month = nov,

doi = "10.1016/j.solener.2011.07.016",

language = "English",

volume = "85",

pages = "2589--2594",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Limited",

number = "11",

}

TY - JOUR

T1 - Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

AU - Fang, Hau Wei

AU - Liu, Shiu Jen

AU - Hsieh, Tsung Eong

AU - Juang, Jenh Yih

AU - Hsieh, Jang Hsing

N1 - Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .

PY - 2011/11

Y1 - 2011/11

N2 - Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

AB - Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

KW - Amorphous In-Zn-O film

KW - Photovoltaic characteristics

KW - Pulsed laser deposition

KW - Semiconductor-insulator-semiconductor solar cell

UR - http://www.scopus.com/inward/record.url?scp=80053973149&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053973149&partnerID=8YFLogxK

U2 - 10.1016/j.solener.2011.07.016

DO - 10.1016/j.solener.2011.07.016

M3 - Article

AN - SCOPUS:80053973149

SN - 0038-092X

VL - 85

SP - 2589

EP - 2594

JO - Solar Energy

JF - Solar Energy

IS - 11

ER -