Fabrication and characterization of amorphous In-Zn-O/SiOx/n-Si heterojunction solar cells

Hau Wei Fang, Shiu Jen Liu*, Tsung Eong Hsieh, Jenh Yih Juang, Jang Hsing Hsieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Amorphous In-Zn-O (a-IZO) films were deposited on SiOx covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiOx/n-Si heterojunction solar cells. The a-IZO films grown at 150°C with various laser power (250-500mJ/pulse) exhibit low resistivity (2-3×10-3Ωcm) and high transparency (∼80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiOx/n-Si solar cells is 2.2% under 100mW/cm2 illumination (AM1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24V, 28.4mA/cm2 and 33.6%, respectively.

Original languageEnglish
Pages (from-to)2589-2594
Number of pages6
JournalSolar Energy
Issue number11
Publication statusPublished - 2011 Nov


  • Amorphous In-Zn-O film
  • Photovoltaic characteristics
  • Pulsed laser deposition
  • Semiconductor-insulator-semiconductor solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • General Materials Science


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