Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme

  • Y. J. Lee
  • , T. C. Lu
  • , H. C. Kuo
  • , S. C. Wang
  • , J. M. Hwang
  • , T. C. Hsu
  • , M. H. Hsieh
  • , M. J. Jou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006
Externally publishedYes
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 26

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/TerritoryUnited States
CityLong Beach, CA
Period2006/05/212006/05/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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