Abstract
GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 |
DOIs | |
Publication status | Published - 2006 Dec 1 |
Event | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: 2006 May 21 → 2006 May 26 |
Publication series
Name | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 |
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Other
Other | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 |
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Country | United States |
City | Long Beach, CA |
Period | 06/5/21 → 06/5/26 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme. / Lee, Y. J.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; Hwang, J. M.; Hsu, T. C.; Hsieh, M. H.; Jou, M. J.
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4628247 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme
AU - Lee, Y. J.
AU - Lu, T. C.
AU - Kuo, H. C.
AU - Wang, S. C.
AU - Hwang, J. M.
AU - Hsu, T. C.
AU - Hsieh, M. H.
AU - Jou, M. J.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.
AB - GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.
UR - http://www.scopus.com/inward/record.url?scp=55649095774&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55649095774&partnerID=8YFLogxK
U2 - 10.1109/CLEO.2006.4628247
DO - 10.1109/CLEO.2006.4628247
M3 - Conference contribution
AN - SCOPUS:55649095774
SN - 1557528136
SN - 9781557528131
T3 - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
BT - Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
ER -