Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme

Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
    DOIs
    Publication statusPublished - 2006 Dec 1
    EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
    Duration: 2006 May 212006 May 26

    Publication series

    NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

    Other

    OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
    CountryUnited States
    CityLong Beach, CA
    Period2006/05/212006/05/26

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics

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