Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme

Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based LEDs with V-shape sapphire facet reflectors were fabricated using a double transferred scheme. It is demonstrated the {1-102} R-plane V-shape facet reflector with high slope of 57° has the superior efficiency for light extraction.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006 Dec 1
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 26

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period06/5/2106/5/26

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Lee, Y. J., Lu, T. C., Kuo, H. C., Wang, S. C., Hwang, J. M., Hsu, T. C., Hsieh, M. H., & Jou, M. J. (2006). Fabricating GaN-based LEDs with V-shape sapphire facet mirror by double transferred scheme. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4628247] (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628247