Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

M. H. Lee, K. T. Chen, C. Y. Liao, S. S. Gu, G. Y. Siang, Y. C. Chou, H. Y. Chen, J. Le, R. C. Hong, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. Tang, Y. D. Lin, H. Y. Lee, K. S. Li, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Extremely steep switch of negative-capacitance (NC) Nanosheet (NS) GAA-FETs and FinFETs are experimentally presented with SS avg SS =22/14 mV dec and SS avg SS =38/21 mV dec, respectively. The sub-60m V/dec current magnitude of sub-60mV/dec is >4 and ∼5 decades for NC-NSGAA and NC-FinFET, respectively. Both NC-NSGAA and NC-FinFET exhibit extremely steep switch behavior due to FET scale down to nano-scale and comparable domain size of polycrystalline HZO. The dramatic current switch with steep slope is measured with only several dipole domains flipping over with gate voltage applied. The apparent Negative-DIBL and NDR (Negative Differential Resistance) are observed due to strong NC boost. The SS depends on WFin/L ratio, and W Fin < L is the solution to achieve sub-60m V/dec. The super-steep slope on current behavior still occurs after multiple DC sweep. The uniform size of each NS for stacked NC-NSGAA is an important issue to optimize the NC effect with SS =19 mV/ dec due to single T NS for capacitance matching by modeling.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages31.8.1-31.8.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2019 Jan 16
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lee, M. H., Chen, K. T., Liao, C. Y., Gu, S. S., Siang, G. Y., Chou, Y. C., Chen, H. Y., Le, J., Hong, R. C., Wang, Z. Y., Chen, S. Y., Chen, P. G., Tang, M., Lin, Y. D., Lee, H. Y., Li, K. S., & Liu, C. W. (2019). Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 31.8.1-31.8.4). [8614510] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614510