Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

M. H. Lee, K. T. Chen, C. Y. Liao, S. S. Gu, G. Y. Siang, Y. C. Chou, H. Y. Chen, J. Le, R. C. Hong, Z. Y. Wang, S. Y. Chen, P. G. Chen, M. Tang, Y. D. Lin, H. Y. Lee, K. S. Li, C. W. Liu

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    6 Citations (Scopus)

    Abstract

    Extremely steep switch of negative-capacitance (NC) Nanosheet (NS) GAA-FETs and FinFETs are experimentally presented with SS avg SS =22/14 mV dec and SS avg SS =38/21 mV dec, respectively. The sub-60m V/dec current magnitude of sub-60mV/dec is >4 and ∼5 decades for NC-NSGAA and NC-FinFET, respectively. Both NC-NSGAA and NC-FinFET exhibit extremely steep switch behavior due to FET scale down to nano-scale and comparable domain size of polycrystalline HZO. The dramatic current switch with steep slope is measured with only several dipole domains flipping over with gate voltage applied. The apparent Negative-DIBL and NDR (Negative Differential Resistance) are observed due to strong NC boost. The SS depends on WFin/L ratio, and W Fin < L is the solution to achieve sub-60m V/dec. The super-steep slope on current behavior still occurs after multiple DC sweep. The uniform size of each NS for stacked NC-NSGAA is an important issue to optimize the NC effect with SS =19 mV/ dec due to single T NS for capacitance matching by modeling.

    Original languageEnglish
    Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages31.8.1-31.8.4
    ISBN (Electronic)9781728119878
    DOIs
    Publication statusPublished - 2019 Jan 16
    Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
    Duration: 2018 Dec 12018 Dec 5

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    Volume2018-December
    ISSN (Print)0163-1918

    Conference

    Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
    CountryUnited States
    CitySan Francisco
    Period18/12/118/12/5

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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