Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

C. H. Liu; Hsiu Shan Lin; Yu Yin Lin; M. G. Chen; T. M. Pan; C. J. Kao; K. T. Huang; S. H. Lin; Y. C. Sheng; Wen Tung Chang; J. H. Lee; M. Huang; Chiung Sheng Hsiung; S. Huang-Lu; Chen Chung Hsu; A. Y. Liang; Jenkon Chen; W. Y. Hsieh; P. W. Yen; S. C. Chien; Y. T. Loh; Y. J. Chang; Fu Tai Liou

doi:10.1109/RELPHY.2002.996646

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment

C. H. Liu
, Hsiu Shan Lin
, Yu Yin Lin
, M. G. Chen
, T. M. Pan
, C. J. Kao
, K. T. Huang
, S. H. Lin
, Y. C. Sheng
, Wen Tung Chang
, J. H. Lee
, M. Huang
, Chiung Sheng Hsiung
, S. Huang-Lu
, Chen Chung Hsu
, A. Y. Liang
, Jenkon Chen
, W. Y. Hsieh
, P. W. Yen
, S. C. Chien

Y. T. Loh, Y. J. Chang, Fu Tai Liou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N₂O-grown oxides subsequently followed by NO RTA treatment (N₂O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO₂- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (∼1.4 nm) fabricated by different processes.

Original language	English
Title of host publication	2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	268-271
Number of pages	4
ISBN (Electronic)	0780373529
DOIs	https://doi.org/10.1109/RELPHY.2002.996646
Publication status	Published - 2002
Externally published	Yes
Event	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States Duration: 2002 Apr 7 → 2002 Apr 11

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2002-January
ISSN (Print)	1541-7026

Conference

Conference	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
Country/Territory	United States
City	Dallas
Period	2002/04/07 → 2002/04/11

Keywords

CMOS technology
Dielectric devices
High K dielectric materials
High-K gate dielectrics
Leakage current
Nitrogen
Plasma properties
Rapid thermal annealing
Rapid thermal processing
Scalability

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/RELPHY.2002.996646

Cite this

Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., ... Liou, F. T. (2002). Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. In 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual (pp. 268-271). Article 996646 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2002.996646

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. / Liu, C. H.; Lin, Hsiu Shan; Lin, Yu Yin et al.
2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., 2002. p. 268-271 996646 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, CH, Lin, HS, Lin, YY, Chen, MG, Pan, TM, Kao, CJ, Huang, KT, Lin, SH, Sheng, YC, Chang, WT, Lee, JH, Huang, M, Hsiung, CS, Huang-Lu, S, Hsu, CC, Liang, AY, Chen, J, Hsieh, WY, Yen, PW, Chien, SC, Loh, YT, Chang, YJ & Liou, FT 2002, Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. in 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual., 996646, IEEE International Reliability Physics Symposium Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 268-271, 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002, Dallas, United States, 2002/04/07. https://doi.org/10.1109/RELPHY.2002.996646

Liu CH, Lin HS, Lin YY, Chen MG, Pan TM, Kao CJ et al. Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. In 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc. 2002. p. 268-271. 996646. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2002.996646

Liu, C. H. ; Lin, Hsiu Shan ; Lin, Yu Yin et al. / Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N₂O-grown oxides and NO RTA treatment. 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 268-271 (IEEE International Reliability Physics Symposium Proceedings).

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title = "Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment",

abstract = "Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N2O-grown oxides subsequently followed by NO RTA treatment (N2O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO2- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (∼1.4 nm) fabricated by different processes.",

keywords = "CMOS technology, Dielectric devices, High K dielectric materials, High-K gate dielectrics, Leakage current, Nitrogen, Plasma properties, Rapid thermal annealing, Rapid thermal processing, Scalability",

author = "Liu, \{C. H.\} and Lin, \{Hsiu Shan\} and Lin, \{Yu Yin\} and Chen, \{M. G.\} and Pan, \{T. M.\} and Kao, \{C. J.\} and Huang, \{K. T.\} and Lin, \{S. H.\} and Sheng, \{Y. C.\} and Chang, \{Wen Tung\} and Lee, \{J. H.\} and M. Huang and Hsiung, \{Chiung Sheng\} and S. Huang-Lu and Hsu, \{Chen Chung\} and Liang, \{A. Y.\} and Jenkon Chen and Hsieh, \{W. Y.\} and Yen, \{P. W.\} and Chien, \{S. C.\} and Loh, \{Y. T.\} and Chang, \{Y. J.\} and Liou, \{Fu Tai\}",

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doi = "10.1109/RELPHY.2002.996646",

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AU - Huang, K. T.

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AU - Chang, Wen Tung

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AU - Huang, M.

AU - Hsiung, Chiung Sheng

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AU - Chen, Jenkon

AU - Hsieh, W. Y.

AU - Yen, P. W.

AU - Chien, S. C.

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AU - Chang, Y. J.

AU - Liou, Fu Tai

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KW - CMOS technology

KW - Dielectric devices

KW - High K dielectric materials

KW - High-K gate dielectrics

KW - Leakage current

KW - Nitrogen

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KW - Rapid thermal annealing

KW - Rapid thermal processing

KW - Scalability

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