Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

C. H. Liu, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, A. Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Y. J. Chang, Fu Tai Liou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Ultra-thin gate dielectrics processed by remote plasma nitridation (RPN) of N2O-grown oxides subsequently followed by NO RTA treatment (N2O+RPN+NO process) are reported for the first time as a means to extend the reliability scaling limit of SiO2- / oxynitride-based gate dielectrics. These films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics of similar thickness (∼1.4 nm) fabricated by different processes.

Original languageEnglish
Title of host publication2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages268-271
Number of pages4
ISBN (Electronic)0780373529
DOIs
Publication statusPublished - 2002 Jan 1
Event40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
Duration: 2002 Apr 72002 Apr 11

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2002-January
ISSN (Print)1541-7026

Conference

Conference40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
CountryUnited States
CityDallas
Period02/4/702/4/11

Keywords

  • CMOS technology
  • Dielectric devices
  • High K dielectric materials
  • High-K gate dielectrics
  • Leakage current
  • Nitrogen
  • Plasma properties
  • Rapid thermal annealing
  • Rapid thermal processing
  • Scalability

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., ... Liou, F. T. (2002). Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment. In 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual (pp. 268-271). [996646] (IEEE International Reliability Physics Symposium Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2002.996646