Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment

Chuan H. Liu, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, Alan Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Yih J. Chang, Fu Tai Liou

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A gate dielectric process was developed by remote plasma nitridation of N2O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

Original languageEnglish
Pages (from-to)268-271
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2002 Jan 1
EventProceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2002 Apr 72002 Apr 11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Liu, C. H., Lin, H. S., Lin, Y. Y., Chen, M. G., Pan, T. M., Kao, C. J., Huang, K. T., Lin, S. H., Sheng, Y. C., Chang, W. T., Lee, J. H., Huang, M., Hsiung, C. S., Huang-Lu, S., Hsu, C. C., Liang, A. Y., Chen, J., Hsieh, W. Y., Yen, P. W., ... Liou, F. T. (2002). Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N2O-grown oxides and NO RTA treatment. Annual Proceedings - Reliability Physics (Symposium), 268-271.