Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N 2 O-grown oxides and NO RTA treatment

Chuan-Hsi Liu, Hsiu Shan Lin, Yu Yin Lin, M. G. Chen, T. M. Pan, C. J. Kao, K. T. Huang, S. H. Lin, Y. C. Sheng, Wen Tung Chang, J. H. Lee, M. Huang, Chiung Sheng Hsiung, S. Huang-Lu, Chen Chung Hsu, Alan Y. Liang, Jenkon Chen, W. Y. Hsieh, P. W. Yen, S. C. ChienY. T. Loh, Yih J. Chang, Fu Tai Liou

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A gate dielectric process was developed by remote plasma nitridation of N 2 O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

Original languageEnglish
Pages (from-to)268-271
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 2002 Jan 1
EventProceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2002 Apr 72002 Apr 11

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Nitridation
Rapid thermal annealing
Gate dielectrics
Plasmas
Oxides
Leakage currents
Electric potential
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N 2 O-grown oxides and NO RTA treatment . / Liu, Chuan-Hsi; Lin, Hsiu Shan; Lin, Yu Yin; Chen, M. G.; Pan, T. M.; Kao, C. J.; Huang, K. T.; Lin, S. H.; Sheng, Y. C.; Chang, Wen Tung; Lee, J. H.; Huang, M.; Hsiung, Chiung Sheng; Huang-Lu, S.; Hsu, Chen Chung; Liang, Alan Y.; Chen, Jenkon; Hsieh, W. Y.; Yen, P. W.; Chien, S. C.; Loh, Y. T.; Chang, Yih J.; Liou, Fu Tai.

In: Annual Proceedings - Reliability Physics (Symposium), 01.01.2002, p. 268-271.

Research output: Contribution to journalConference article

Liu, C-H, Lin, HS, Lin, YY, Chen, MG, Pan, TM, Kao, CJ, Huang, KT, Lin, SH, Sheng, YC, Chang, WT, Lee, JH, Huang, M, Hsiung, CS, Huang-Lu, S, Hsu, CC, Liang, AY, Chen, J, Hsieh, WY, Yen, PW, Chien, SC, Loh, YT, Chang, YJ & Liou, FT 2002, ' Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N 2 O-grown oxides and NO RTA treatment ', Annual Proceedings - Reliability Physics (Symposium), pp. 268-271.
Liu, Chuan-Hsi ; Lin, Hsiu Shan ; Lin, Yu Yin ; Chen, M. G. ; Pan, T. M. ; Kao, C. J. ; Huang, K. T. ; Lin, S. H. ; Sheng, Y. C. ; Chang, Wen Tung ; Lee, J. H. ; Huang, M. ; Hsiung, Chiung Sheng ; Huang-Lu, S. ; Hsu, Chen Chung ; Liang, Alan Y. ; Chen, Jenkon ; Hsieh, W. Y. ; Yen, P. W. ; Chien, S. C. ; Loh, Y. T. ; Chang, Yih J. ; Liou, Fu Tai. / Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N 2 O-grown oxides and NO RTA treatment In: Annual Proceedings - Reliability Physics (Symposium). 2002 ; pp. 268-271.
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abstract = "A gate dielectric process was developed by remote plasma nitridation of N 2 O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.",
author = "Chuan-Hsi Liu and Lin, {Hsiu Shan} and Lin, {Yu Yin} and Chen, {M. G.} and Pan, {T. M.} and Kao, {C. J.} and Huang, {K. T.} and Lin, {S. H.} and Sheng, {Y. C.} and Chang, {Wen Tung} and Lee, {J. H.} and M. Huang and Hsiung, {Chiung Sheng} and S. Huang-Lu and Hsu, {Chen Chung} and Liang, {Alan Y.} and Jenkon Chen and Hsieh, {W. Y.} and Yen, {P. W.} and Chien, {S. C.} and Loh, {Y. T.} and Chang, {Yih J.} and Liou, {Fu Tai}",
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T1 - Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N 2 O-grown oxides and NO RTA treatment

AU - Liu, Chuan-Hsi

AU - Lin, Hsiu Shan

AU - Lin, Yu Yin

AU - Chen, M. G.

AU - Pan, T. M.

AU - Kao, C. J.

AU - Huang, K. T.

AU - Lin, S. H.

AU - Sheng, Y. C.

AU - Chang, Wen Tung

AU - Lee, J. H.

AU - Huang, M.

AU - Hsiung, Chiung Sheng

AU - Huang-Lu, S.

AU - Hsu, Chen Chung

AU - Liang, Alan Y.

AU - Chen, Jenkon

AU - Hsieh, W. Y.

AU - Yen, P. W.

AU - Chien, S. C.

AU - Loh, Y. T.

AU - Chang, Yih J.

AU - Liou, Fu Tai

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A gate dielectric process was developed by remote plasma nitridation of N 2 O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

AB - A gate dielectric process was developed by remote plasma nitridation of N 2 O oxides with rapid thermal NO annealing. Superior interface properties, reduced leakage current and improved reliability was shown by the films. The stress induced leakage current (SILC) was shown as a function of stress time under constant voltage stress of 2.6 V in inversion mode and stress temperature of 160°C.

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JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

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