Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory

Chun Hu Cheng, Yu Chien Chiu, Guan Lin Liou

Research output: Contribution to journalLetter

11 Citations (Scopus)

Abstract

In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low-voltage-driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic-like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S-shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.

Original languageEnglish
Article number1700098
JournalPhysica Status Solidi - Rapid Research Letters
Volume11
Issue number10
DOIs
Publication statusPublished - 2017 Oct

Fingerprint

Ferroelectric materials
Transistors
Capacitance
transistors
capacitance
Data storage equipment
hafnium oxides
low voltage
Hafnium oxides
occurrences
dipoles
polarization
Phase transitions
Polarization
simulation
Electric potential

Keywords

  • HfZrO
  • ferroelectrics
  • negative capacitance
  • orthorhombic

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory. / Cheng, Chun Hu; Chiu, Yu Chien; Liou, Guan Lin.

In: Physica Status Solidi - Rapid Research Letters, Vol. 11, No. 10, 1700098, 10.2017.

Research output: Contribution to journalLetter

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AB - In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low-voltage-driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic-like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S-shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.

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