Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O

C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Z. F. Lou, Z. X. Li, H. C. Tseng, F. S. Chang, W. C. Ray, C. C. Wang, J. Y. Lee, P. H. Chen, J. H. Tsai, M. H. Liao, M. H. Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.

Original languageEnglish
Pages (from-to)1559-1562
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number9
DOIs
Publication statusPublished - 2022 Sep 1

Keywords

  • Antiferroelectric
  • charge enhancement
  • reverse switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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