Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O

C. Y. Liao; K. Y. Hsiang; C. Y. Lin; Z. F. Lou; Z. X. Li; H. C. Tseng; F. S. Chang; W. C. Ray; C. C. Wang; J. Y. Lee; P. H. Chen; J. H. Tsai; M. H. Liao; M. H. Lee

doi:10.1109/LED.2022.3189669

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O

C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Z. F. Lou, Z. X. Li, H. C. Tseng, F. S. Chang, W. C. Ray, C. C. Wang, J. Y. Lee, P. H. Chen, J. H. Tsai, M. H. Liao, M. H. Lee^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.

Original language	English
Pages (from-to)	1559-1562
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	9
DOIs	https://doi.org/10.1109/LED.2022.3189669
Publication status	Published - 2022 Sept 1

Keywords

Antiferroelectric
charge enhancement
reverse switching

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2022.3189669

Cite this

@article{133960ee874343e385662c49b1f971c3,

title = "Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O",

abstract = "Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.",

keywords = "Antiferroelectric, charge enhancement, reverse switching",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Lin, {C. Y.} and Lou, {Z. F.} and Li, {Z. X.} and Tseng, {H. C.} and Chang, {F. S.} and Ray, {W. C.} and Wang, {C. C.} and Lee, {J. Y.} and Chen, {P. H.} and Tsai, {J. H.} and Liao, {M. H.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2022",

month = sep,

day = "1",

doi = "10.1109/LED.2022.3189669",

language = "English",

volume = "43",

pages = "1559--1562",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lin, C. Y.

AU - Lou, Z. F.

AU - Li, Z. X.

AU - Tseng, H. C.

AU - Chang, F. S.

AU - Ray, W. C.

AU - Wang, C. C.

AU - Lee, J. Y.

AU - Chen, P. H.

AU - Tsai, J. H.

AU - Liao, M. H.

AU - Lee, M. H.

PY - 2022/9/1

Y1 - 2022/9/1

N2 - Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.

AB - Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.

KW - Antiferroelectric

KW - charge enhancement

KW - reverse switching

UR - http://www.scopus.com/inward/record.url?scp=85134200504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85134200504&partnerID=8YFLogxK

U2 - 10.1109/LED.2022.3189669

DO - 10.1109/LED.2022.3189669

M3 - Article

AN - SCOPUS:85134200504

SN - 0741-3106

VL - 43

SP - 1559

EP - 1562

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf.Zr.O

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this