Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen; Y. T. Wei; M. Tang; M. H. Lee

doi:10.1109/TED.2014.2330504

Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen
, Y. T. Wei
, M. Tang
, M. H. Lee

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (g_m) (18.4% enhancement) using the negative capacitance (NC) effect. An (I_Dlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dV_g) at 2-D electron gas, due to NC with small (V_DS). The channel conductance (g_d) at almost zero (V_DS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

Original language	English
Article number	6845344
Pages (from-to)	3014-3017
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	8
DOIs	https://doi.org/10.1109/TED.2014.2330504
Publication status	Published - 2014 Aug
Externally published	Yes

Keywords

AlGaN/GaN
ferroelectric (FE)
subthreshold swing (SS).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2014.2330504

Cite this

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title = "Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications",

abstract = "AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4\% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23\% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33\% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.",

keywords = "AlGaN/GaN, ferroelectric (FE), subthreshold swing (SS).",

author = "Chen, \{P. G.\} and Wei, \{Y. T.\} and M. Tang and Lee, \{M. H.\}",

year = "2014",

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doi = "10.1109/TED.2014.2330504",

language = "English",

volume = "61",

pages = "3014--3017",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

AU - Chen, P. G.

AU - Wei, Y. T.

AU - Tang, M.

AU - Lee, M. H.

PY - 2014/8

Y1 - 2014/8

N2 - AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

AB - AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

KW - AlGaN/GaN

KW - ferroelectric (FE)

KW - subthreshold swing (SS).

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UR - https://www.scopus.com/pages/publications/84905236839#tab=citedBy

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DO - 10.1109/TED.2014.2330504

M3 - Article

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SP - 3014

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IS - 8

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Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

Abstract

Keywords

ASJC Scopus subject areas

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