Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen, Y. T. Wei, M. Tang, M. H. Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

Original languageEnglish
Article number6845344
Pages (from-to)3014-3017
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume61
Issue number8
DOIs
Publication statusPublished - 2014 Aug

Fingerprint

High electron mobility transistors
Ferroelectric materials
Amplification
Capacitance
Demonstrations
Electric potential
Polarization
Electron gas
Transconductance
Transistors
Metals
aluminum gallium nitride

Keywords

  • AlGaN/GaN
  • ferroelectric (FE)
  • subthreshold swing (SS).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications. / Chen, P. G.; Wei, Y. T.; Tang, M.; Lee, M. H.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 8, 6845344, 08.2014, p. 3014-3017.

Research output: Contribution to journalArticle

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