Experimental demonstration of ferroelectric gate-stack AlGaN/GaN-on-Si MOS-HEMTs with voltage amplification for power applications

P. G. Chen, Y. T. Wei, M. Tang, M. H. Lee

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    AlGaN/GaN-on-Si metal-oxide-semiconductor high-elec-tron mobility transistors with integrated ferroelectric (FE) polarization gate-stacks improve the subthreshold swing (from 4 to 2 V/decade) and the peak transconductance (gm) (18.4% enhancement) using the negative capacitance (NC) effect. An (IDlin) with ∼23% enhancement and a high overdrive voltage implies a higher d Ψ/dVg) at 2-D electron gas, due to NC with small (VDS). The channel conductance (gd) at almost zero (VDS) exhibits a 33% enhancement due to internal voltage amplification. The polarization is experimentally established with the validity of FE gate-stack with NC characteristics.

    Original languageEnglish
    Article number6845344
    Pages (from-to)3014-3017
    Number of pages4
    JournalIEEE Transactions on Electron Devices
    Volume61
    Issue number8
    DOIs
    Publication statusPublished - 2014 Aug

    Keywords

    • AlGaN/GaN
    • ferroelectric (FE)
    • subthreshold swing (SS).

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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