Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa

Li Shing Hsu; Y. K. Wang; G. Y. Guo

doi:10.1063/1.1491018

Experimental and theoretical study of the electronic structures of Ni ₃Al, Ni ₃Ga, Ni ₃In, and NiGa

Li Shing Hsu^*, Y. K. Wang, G. Y. Guo

^*Corresponding author for this work

Graduate Institute of Mass Communication

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The electronic structures of Ni ₃Al, Ni ₃Ga, Ni ₃In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni ₃Al, Ni ₃Ga, and Ni ₃In are between 0.7-0.8μ _B/cell. The number of 3d holes per Ni atom is calculated for Ni ₃Al, Ni ₃Ga, and Ni ₃In. These numbers show correlation with heats of formation of the bulk compounds.

Original language	English
Pages (from-to)	1419-1424
Number of pages	6
Journal	Journal of Applied Physics
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.1491018
Publication status	Published - 2002 Aug 1

ASJC Scopus subject areas

General Physics and Astronomy

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@article{3a0fffb8ea5140958619977226a363c4,

title = "Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa",

abstract = "The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds.",

author = "Hsu, {Li Shing} and Wang, {Y. K.} and Guo, {G. Y.}",

note = "Funding Information: We thank J.-Y Pieh and W.-F. Pong for EDX measurement, K.-L. Tsang and S.-C. Chung for their help in data taking, and A. Ankudinov, P. Rez, and J. J. Rehr for interesting discussions. This work was partially supported by grant from the National Science Council, Taiwan, R.O.C. and by DOE grant DE- FG03-98ER45718. ",

year = "2002",

month = aug,

day = "1",

doi = "10.1063/1.1491018",

language = "English",

volume = "92",

pages = "1419--1424",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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T1 - Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa

AU - Hsu, Li Shing

AU - Wang, Y. K.

AU - Guo, G. Y.

N1 - Funding Information: We thank J.-Y Pieh and W.-F. Pong for EDX measurement, K.-L. Tsang and S.-C. Chung for their help in data taking, and A. Ankudinov, P. Rez, and J. J. Rehr for interesting discussions. This work was partially supported by grant from the National Science Council, Taiwan, R.O.C. and by DOE grant DE- FG03-98ER45718.

PY - 2002/8/1

Y1 - 2002/8/1

N2 - The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds.

AB - The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds.

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U2 - 10.1063/1.1491018

DO - 10.1063/1.1491018

M3 - Article

AN - SCOPUS:0036677364

SN - 0021-8979

VL - 92

SP - 1419

EP - 1424

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Experimental and theoretical study of the electronic structures of Ni ₃Al, Ni ₃Ga, Ni ₃In, and NiGa

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