Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa

Li Shing Hsu, Y. K. Wang, G. Y. Guo

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds.

Original languageEnglish
Pages (from-to)1419-1424
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number3
DOIs
Publication statusPublished - 2002 Aug 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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