Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells

Y. F. Chen, T. Y. Lin, Hong-Chang Yang

Research output: Contribution to journalConference article

Abstract

Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3938
Publication statusPublished - 2000 Jan 1
EventLight-Emitting Diodes: Research, Manufacturing, and Applications IV - San Jose, CA, USA
Duration: 2000 Jan 262000 Jan 27

Fingerprint

InGaN
Exciton
Stokes
Excitons
Photoluminescence
Photoconductivity
excitons
photoconductivity
photoluminescence
shift
Fluctuations
Chemical analysis
Stark effect
Optical properties
Optical Properties
optical properties
Absorption
Excitation
Kinetics
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Exciton localization and the Stokes' shift in undoped InGaN/GaN multiquantum wells. / Chen, Y. F.; Lin, T. Y.; Yang, Hong-Chang.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3938, 01.01.2000, p. 137-142.

Research output: Contribution to journalConference article

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N2 - Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

AB - Optical properties of undoped InGaN/GaN multiquantum wells (MQWs) have been investigated by photoconductivity, photoluminescence, and photoluminescence excitation measurements. We report the first observation of persistent photoconductivity (PPC) in InGaN/GaN MQWs and show that the PPC effect arises from In composition fluctuations in the InGaN well layer. From the analysis of the decay kinetics, the localization depth caused by composition fluctuations has been determined. Compared with the results of complementary absorption and photoluminescence measurements, it is found that the quantum-confined Stark effect due to piezoelectric field and composition fluctuations both exist in the InGaN/GaN MQWs. These two effects are responsible for the photoluminescence Stokes' shift in the InGaN well layers. Here, we provide an unique way to distinguish the individual contribution to the Stokes' shift for the piezoelectric field and composition fluctuations.

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