Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors

Tzuen Rong Yang; Mi Ra Kim

doi:10.1117/12.392110

Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors

Tzuen Rong Yang^*, Mi Ra Kim

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II_1-xMn_xVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

Original language	English
Pages (from-to)	704-711
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4078
DOIs	https://doi.org/10.1117/12.392110
Publication status	Published - 2000
Event	Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 2000 Jul 26 → 2000 Jul 28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.392110

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title = "Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors",

abstract = "The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.",

author = "Yang, {Tzuen Rong} and Kim, {Mi Ra}",

year = "2000",

doi = "10.1117/12.392110",

language = "English",

volume = "4078",

pages = "704--711",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Yang, Tzuen Rong

AU - Kim, Mi Ra

PY - 2000

Y1 - 2000

N2 - The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

AB - The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Optoelectronic Materials and Devices II

Y2 - 26 July 2000 through 28 July 2000

ER -

Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors

Abstract

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