Exchange interaction of 3d transition metal impurity with band electrons in diluted magnetic semiconductors

Tzuen Rong Yang, Mi Ra Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of the exchange interaction between the localized d electrons of manganese ion and the delocalized host band electrons in II1-xMnxVI semiconductors are discussed based on the perturbation scheme and the k·p theory as a function of the manganese composition. We observe that the exchange interaction lead to the red shift of the energy gap and it is shown that the many-body interaction due to exchange play an important role in accurate depiction of the energy gap with variation of the manganese amounts in diluted magnetic semiconductors. In addition, we have compared the results with experimental data of IR spectroscopy.

Original languageEnglish
Pages (from-to)704-711
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
Publication statusPublished - 2000 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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