Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4838297

Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Information regarding the conductivity type of Si/GeO_x/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeO_x films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO₂ films exhibit unipolar electron conductivity.

Original language	English
Article number	232904
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4838297
Publication status	Published - 2013 Dec 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4838297

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title = "Evolution of the conductivity type in germania by varying the stoichiometry",

abstract = "Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.",

author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Cheng, {C. H.} and A. Chin",

note = "Funding Information: This work was supported by projects No. 1.13 and 4.18 of the Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.",

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AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

N1 - Funding Information: This work was supported by projects No. 1.13 and 4.18 of the Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

AB - Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

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Evolution of the conductivity type in germania by varying the stoichiometry

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