Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

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Abstract

Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

Original languageEnglish
Article number232904
JournalApplied Physics Letters
Volume103
Issue number23
DOIs
Publication statusPublished - 2013 Dec 2

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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