Evolution of the conductivity type in germania by varying the stoichiometry

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

Research output: Contribution to journalArticle

Abstract

Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

Original languageEnglish
Article number232904
JournalApplied Physics Letters
Volume103
Issue number23
DOIs
Publication statusPublished - 2013 Dec 2

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stoichiometry
germanium
conductivity
minority carriers
electrons
injection
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Evolution of the conductivity type in germania by varying the stoichiometry. / Islamov, D. R.; Gritsenko, V. A.; Cheng, C. H.; Chin, A.

In: Applied Physics Letters, Vol. 103, No. 23, 232904, 02.12.2013.

Research output: Contribution to journalArticle

Islamov, D. R. ; Gritsenko, V. A. ; Cheng, C. H. ; Chin, A. / Evolution of the conductivity type in germania by varying the stoichiometry. In: Applied Physics Letters. 2013 ; Vol. 103, No. 23.
@article{7e143b079da54e04b979db709b84149f,
title = "Evolution of the conductivity type in germania by varying the stoichiometry",
abstract = "Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.",
author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Cheng, {C. H.} and A. Chin",
year = "2013",
month = "12",
day = "2",
doi = "10.1063/1.4838297",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Evolution of the conductivity type in germania by varying the stoichiometry

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

AB - Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity.

UR - http://www.scopus.com/inward/record.url?scp=84889851942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84889851942&partnerID=8YFLogxK

U2 - 10.1063/1.4838297

DO - 10.1063/1.4838297

M3 - Article

AN - SCOPUS:84889851942

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 232904

ER -