Evidences of defect contribution in magnetically ordered Sm-implanted GaN

Fang Yuh Lo; Jhong Yu Guo; Cheng De Huang; Kai Chieh Chou; Hsiang Lin Liu; Verena Ney; Andreas Ney; Ming Yau Chern; Stepan Shvarkov; Dirk Reuter; Andreas D. Wieck; Sébastien Pezzagna; Jean Massies

doi:10.1016/j.cap.2013.11.051

Evidences of defect contribution in magnetically ordered Sm-implanted GaN

Fang Yuh Lo^*, Jhong Yu Guo, Cheng De Huang, Kai Chieh Chou, Hsiang Lin Liu, Verena Ney, Andreas Ney, Ming Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas D. Wieck, Sébastien Pezzagna, Jean Massies

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 10¹⁴ and 10¹⁶ cm^-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 10¹⁵ cm^-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

Original language	English
Pages (from-to)	S7-S11
Journal	Current Applied Physics
Volume	14
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2013.11.051
Publication status	Published - 2014 Mar 14

Keywords

Implantation-induced Ga vacancy
Long-range magnetic ordering
Room-temperature ferromagnetism
Sm-implanted GaN

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

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10.1016/j.cap.2013.11.051

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@article{15347cd9799c4e8fb27258570ea13fd8,

title = "Evidences of defect contribution in magnetically ordered Sm-implanted GaN",

abstract = "Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 1014 and 1016 cm-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 1015 cm-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.",

keywords = "Implantation-induced Ga vacancy, Long-range magnetic ordering, Room-temperature ferromagnetism, Sm-implanted GaN",

author = "Lo, {Fang Yuh} and Guo, {Jhong Yu} and Huang, {Cheng De} and Chou, {Kai Chieh} and Liu, {Hsiang Lin} and Verena Ney and Andreas Ney and Chern, {Ming Yau} and Stepan Shvarkov and Dirk Reuter and Wieck, {Andreas D.} and S{\'e}bastien Pezzagna and Jean Massies",

note = "Funding Information: The work in Taiwan was supported by the National Science Council of Taiwan by the grants: NSC 98-2112-M-003-007-MY3 , NSC 100-2112-M-003-007-MY3 , and NSC 101-2112-M-003-003 . We also thank Dr. Min Kai Lee at NSC Instrument Center at NCKU for the help with SQUID measurements. The work in Germany was supported by the Deutsche Froschungsgemeinschaft in the framework of the Sonderforschungsbereich 491 and the Priority Program SPP 1285, the Universit{\'e} Franco-Allemande (DFH/UFA) within the CDFA-05-06, and the European Union under the Marie-Curie Excellence grant no. MEXT-CT-2004-01495 of the sixth Framework Programme.",

year = "2014",

month = mar,

day = "14",

doi = "10.1016/j.cap.2013.11.051",

language = "English",

volume = "14",

pages = "S7--S11",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Evidences of defect contribution in magnetically ordered Sm-implanted GaN

AU - Lo, Fang Yuh

AU - Guo, Jhong Yu

AU - Huang, Cheng De

AU - Chou, Kai Chieh

AU - Liu, Hsiang Lin

AU - Ney, Verena

AU - Ney, Andreas

AU - Chern, Ming Yau

AU - Shvarkov, Stepan

AU - Reuter, Dirk

AU - Wieck, Andreas D.

AU - Pezzagna, Sébastien

AU - Massies, Jean

N1 - Funding Information: The work in Taiwan was supported by the National Science Council of Taiwan by the grants: NSC 98-2112-M-003-007-MY3 , NSC 100-2112-M-003-007-MY3 , and NSC 101-2112-M-003-003 . We also thank Dr. Min Kai Lee at NSC Instrument Center at NCKU for the help with SQUID measurements. The work in Germany was supported by the Deutsche Froschungsgemeinschaft in the framework of the Sonderforschungsbereich 491 and the Priority Program SPP 1285, the Université Franco-Allemande (DFH/UFA) within the CDFA-05-06, and the European Union under the Marie-Curie Excellence grant no. MEXT-CT-2004-01495 of the sixth Framework Programme.

PY - 2014/3/14

Y1 - 2014/3/14

N2 - Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 1014 and 1016 cm-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 1015 cm-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

AB - Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 1014 and 1016 cm-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 1015 cm-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

KW - Implantation-induced Ga vacancy

KW - Long-range magnetic ordering

KW - Room-temperature ferromagnetism

KW - Sm-implanted GaN

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U2 - 10.1016/j.cap.2013.11.051

DO - 10.1016/j.cap.2013.11.051

M3 - Article

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SN - 1567-1739

VL - 14

SP - S7-S11

JO - Current Applied Physics

JF - Current Applied Physics

IS - SUPPL. 1

ER -

Evidences of defect contribution in magnetically ordered Sm-implanted GaN

Abstract

Keywords

ASJC Scopus subject areas

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