Evidences of defect contribution in magnetically ordered Sm-implanted GaN

Fang Yuh Lo*, Jhong Yu Guo, Cheng De Huang, Kai Chieh Chou, Hsiang Lin Liu, Verena Ney, Andreas Ney, Ming Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas D. Wieck, Sébastien Pezzagna, Jean Massies

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 1014 and 1016 cm-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 1015 cm-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

Original languageEnglish
Pages (from-to)S7-S11
JournalCurrent Applied Physics
Issue numberSUPPL. 1
Publication statusPublished - 2014 Mar 14


  • Implantation-induced Ga vacancy
  • Long-range magnetic ordering
  • Room-temperature ferromagnetism
  • Sm-implanted GaN

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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