Evidences of defect contribution in magnetically ordered Sm-implanted GaN

Fang Yuh Lo, Jhong Yu Guo, Cheng De Huang, Kai Chieh Chou, Hsiang Lin Liu, Verena Ney, Andreas Ney, Ming Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas D. Wieck, Sébastien Pezzagna, Jean Massies

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3 Citations (Scopus)

Abstract

Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 1014 and 1016 cm-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 1015 cm-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.

Original languageEnglish
Pages (from-to)S7-S11
JournalCurrent Applied Physics
Volume14
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2014 Mar 14

Keywords

  • Implantation-induced Ga vacancy
  • Long-range magnetic ordering
  • Room-temperature ferromagnetism
  • Sm-implanted GaN

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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    Lo, F. Y., Guo, J. Y., Huang, C. D., Chou, K. C., Liu, H. L., Ney, V., Ney, A., Chern, M. Y., Shvarkov, S., Reuter, D., Wieck, A. D., Pezzagna, S., & Massies, J. (2014). Evidences of defect contribution in magnetically ordered Sm-implanted GaN. Current Applied Physics, 14(SUPPL. 1), S7-S11. https://doi.org/10.1016/j.cap.2013.11.051