Samarium (Sm) ions of 200 keV in energy were implanted into highly-resistive molecular-beam-epitaxy grown GaN thin films with a focused-ion-beam implanter at room temperature. The implantation doses range between 1014 and 1016 cm-2. X-ray diffraction revealed Sm incorporation into GaN matrix without secondary phase. Raman-scattering spectroscopy identified impurity-independent defect-related oscillation modes. Slight decrease in band gap and significant reduction in transmittance were observed by optical transmission spectroscopy. Photoluminescence spectra showed emission peaks related to background p-type impurity. Ferromagnetic hysteresis loops were recorded from GaN implanted with highest Sm dose, and magnetic ordering was observed from Sm-implanted GaN with dose of and above 1015 cm-2. The long-range magnetic ordering can be attributed to interaction of Sm ions through the implantation-induced Ga vacancy.
- Implantation-induced Ga vacancy
- Long-range magnetic ordering
- Room-temperature ferromagnetism
- Sm-implanted GaN
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)